No. |
Part Name |
Description |
Manufacturer |
211 |
2N6064 |
Germanium 10A power transistor 56W 80V |
Motorola |
212 |
2N6107 |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 7Adc, PD = 40W. |
USHA India LTD |
213 |
2N6123 |
40.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 20 - 80 hFE. |
Continental Device India Limited |
214 |
2N6123 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. |
General Electric Solid State |
215 |
2N6123 |
Trans GP BJT NPN 80V 4A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
216 |
2N6126 |
40.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 20 - 80 hFE. |
Continental Device India Limited |
217 |
2N6126 |
Trans GP BJT PNP 80V 4A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
218 |
2N6128 |
Trans GP BJT NPN 80V 10A 3-Pin TO-61 |
New Jersey Semiconductor |
219 |
2N6180 |
Trans GP BJT PNP 80V 10A 3-Pin TO-59 |
New Jersey Semiconductor |
220 |
2N6182 |
Trans GP BJT PNP 80V 10A 3-Pin TO-59 |
New Jersey Semiconductor |
221 |
2N6183 |
Trans GP BJT PNP 80V 10A 3-Pin TO-59 |
New Jersey Semiconductor |
222 |
2N6186 |
10A medium power PNP silicon transistor 60W 80V |
Motorola |
223 |
2N6186 |
Trans GP BJT PNP 80V 10A 3-Pin TO-59 |
New Jersey Semiconductor |
224 |
2N6187 |
10A medium power PNP silicon transistor 60W 80V |
Motorola |
225 |
2N6187 |
Trans GP BJT PNP 80V 10A 3-Pin TO-59 |
New Jersey Semiconductor |
226 |
2N6190 |
5A Silicon power PNP transistor 10W 80V |
Motorola |
227 |
2N6190 |
Trans GP BJT PNP 80V 5A 3-Pin TO-39 Box |
New Jersey Semiconductor |
228 |
2N6191 |
5A Silicon power PNP transistor 10W 80V |
Motorola |
229 |
2N6254 |
Trans GP BJT NPN 80V 15A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
230 |
2N6283 |
Trans Darlington NPN 80V 20A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
231 |
2N6286 |
Trans Darlington PNP 80V 20A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
232 |
2N6286 |
Power 20A 80V Darlington PNP |
ON Semiconductor |
233 |
2N6292 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. |
General Electric Solid State |
234 |
2N6292 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 7Adc, Ib = 3Adc, PD = 40W. |
USHA India LTD |
235 |
2N6293 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. |
General Electric Solid State |
236 |
2N6295 |
4A Darlington silicon power NPN transistor 50W 80V |
Motorola |
237 |
2N6295 |
Trans Darlington NPN 80V 4A 3-Pin(2+Tab) TO-66 Sleeve |
New Jersey Semiconductor |
238 |
2N6297 |
4A Darlington silicon power PNP transistor 50W 80V |
Motorola |
239 |
2N6297 |
Trans Darlington PNP 80V 4A 3-Pin(2+Tab) TO-66 Sleeve |
New Jersey Semiconductor |
240 |
2N6299 |
Trans Darlington PNP 80V 8A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
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