| No. |
Part Name |
Description |
Manufacturer |
| 211 |
1N5346 |
Diode Zener Single 9.1V 20% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
| 212 |
1N5346A |
Zener Diode 9.1V 5W |
Motorola |
| 213 |
1N5346A |
Diode Zener Single 9.1V 10% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
| 214 |
1N5346B |
Zener Diode 9.1V 5W |
Motorola |
| 215 |
1N5346B |
Diode Zener Single 9.1V 5% 5W 2-Pin DO-201AE |
New Jersey Semiconductor |
| 216 |
1N5346B |
Zener 9.1V 5W 5% |
ON Semiconductor |
| 217 |
1N5346BRL |
Zener 9.1V 5W 5% |
ON Semiconductor |
| 218 |
1N5346C |
Diode Zener Single 9.1V 2% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
| 219 |
1N5346D |
Diode Zener Single 9.1V 1% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
| 220 |
1N53A |
Silicon Signal Diode - Microwave Ka-band Mixer f=34,860 MHz NF=13.1 to 9.0 dB |
Motorola |
| 221 |
1N53B |
Silicon Signal Diode - Microwave Ka-band Mixer f=34,860 MHz NF=13.1 to 9.0 dB |
Motorola |
| 222 |
1N53C |
Silicon Signal Diode - Microwave Ka-band Mixer f=34,860 MHz NF=13.1 to 9.0 dB |
Motorola |
| 223 |
1N53D |
Silicon Signal Diode - Microwave Ka-band Mixer f=34,860 MHz NF=13.1 to 9.0 dB |
Motorola |
| 224 |
1N5529 |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 9.1V ±20% tolerance |
Motorola |
| 225 |
1N5529 |
Diode Zener Single 9.1V 20% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 226 |
1N5529A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 9.1 V. Test current 1.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 227 |
1N5529A |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 9.1V ±10% tolerance |
Motorola |
| 228 |
1N5529A |
Diode Zener Single 9.1V 10% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 229 |
1N5529B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 9.1 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 230 |
1N5529B |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 9.1V ±5% tolerance |
Motorola |
| 231 |
1N5529B |
Diode Zener Single 9.1V 5% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 232 |
1N5529C |
0.4 W, low voltage avalanche diode. Nominal zener voltage 9.1 V. Test current 1.0 mAdc. +-2% tolerance. |
Jinan Gude Electronic Device |
| 233 |
1N5529C |
Diode Zener Single 9.1V 2% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 234 |
1N5529D |
Diode Zener Single 9.1V 1% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 235 |
1N5634A |
Diode TVS Single Uni-Dir 9.4V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 236 |
1N5635 |
Diode TVS Single Uni-Dir 9.72V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 237 |
1N5635B |
Diode TVS Single Uni-Dir 9.72V 1.5KW 2-Pin DO-13 Bulk |
New Jersey Semiconductor |
| 238 |
1N5735 |
Diode Zener Single 9.1V 20% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 239 |
1N5735A |
Diode Zener Single 9.1V 10% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 240 |
1N5735B |
Diode Zener Single 9.1V 5% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
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