| No. |
Part Name |
Description |
Manufacturer |
| 211 |
1N4005G |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
| 212 |
1N4006 |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
| 213 |
1N4006G |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
| 214 |
1N4007 |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
| 215 |
1N4007G |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
| 216 |
1N4148 |
Diode Switching 100V 0.2A 2-Pin ALF |
New Jersey Semiconductor |
| 217 |
1N5149 |
Silicon high-frequency step-recovery power varactor for 100MHz to 2.0 GHz harmonic-generation applications, output power to 25W al 1GHz |
Motorola |
| 218 |
1N5150 |
Silicon high-frequency step-recovery power varactor for 100MHz to 2.0 GHz harmonic-generation applications, output power to 25W al 1GHz |
Motorola |
| 219 |
1NE11 |
Silicon alloy-diffused junction avalanche rectifier 1A 1000V |
TOSHIBA |
| 220 |
1QE11 |
Silicon alloy-diffused junction avalanche rectifier 1A 1200V |
TOSHIBA |
| 221 |
1S1286 |
Mobile alternator diode |
TOSHIBA |
| 222 |
1S1286R |
Mobile alternator diode |
TOSHIBA |
| 223 |
1S1287 |
Mobile alternator diode |
TOSHIBA |
| 224 |
1S1287R |
Mobile alternator diode |
TOSHIBA |
| 225 |
1S1288 |
Mobile alternator diode |
TOSHIBA |
| 226 |
1S1288R |
Mobile alternator diode |
TOSHIBA |
| 227 |
1S144 |
Silicon Alloy junction meter protection diode |
TOSHIBA |
| 228 |
1S689 |
Germanium Alloyed Junction Diode, VR(peak) -200V, intended for use in TV Horizontal Deflection Dampar |
Hitachi Semiconductor |
| 229 |
1S689A |
Germanium Alloyed Junction Diode, VR(peak) -270V, intended for use in TV Horizontal Deflection Dampar |
Hitachi Semiconductor |
| 230 |
1S752H |
Silicon Alloyed Junction, Zener Diode Vz=2.0...3.2 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 231 |
1S753H |
Silicon Alloyed Junction, Zener Diode Vz=3.0...3.9 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 232 |
1S754H |
Silicon Alloyed Junction, Zener Diode Vz=3.7...4.5 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 233 |
1S755H |
Silicon Alloyed Junction, Zener Diode Vz=4.3...5.4 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 234 |
1S770 |
Mobile alternator diode |
TOSHIBA |
| 235 |
1S770R |
Mobile alternator diode |
TOSHIBA |
| 236 |
20SEF120M |
Conductive Polymer Aluminum Solid Capacitors (OS-CON) SEF |
Panasonic |
| 237 |
20SEF180M |
Conductive Polymer Aluminum Solid Capacitors (OS-CON) SEF |
Panasonic |
| 238 |
20SEF390M |
Conductive Polymer Aluminum Solid Capacitors (OS-CON) SEF |
Panasonic |
| 239 |
20SEF560M |
Conductive Polymer Aluminum Solid Capacitors (OS-CON) SEF |
Panasonic |
| 240 |
20SEP100M |
Conductive Polymer Aluminum Solid Capacitors (OS-CON) SEP |
Panasonic |
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