No. |
Part Name |
Description |
Manufacturer |
211 |
128MX72 SDRAM (INTEL 1.2 VER BASE) |
128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Serial Presence Detec |
Samsung Electronic |
212 |
128MX72 SDRAM (INTEL 1.2 VER BASE) |
128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Serial Presence Detec |
Samsung Electronic |
213 |
128MX72 SDRAM (INTEL 1.2 VER BASE) |
128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Data Sheet |
Samsung Electronic |
214 |
128MX72 SDRAM (INTEL 1.2 VER BASE) |
128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Data Sheet |
Samsung Electronic |
215 |
128MX72 SDRAM (INTEL 1.2 VER BASE) |
128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Data Sheet |
Samsung Electronic |
216 |
128MX72 SDRAM (INTEL 1.2 VER BASE) |
128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Data Sheet |
Samsung Electronic |
217 |
12F100B |
V(rrm): 1000V; 12A diffused silicon rectifier diode. For general pusposes: for battery chargers, converters, power supplies, machine tool controls |
International Rectifier |
218 |
12F120B |
V(rrm): 1200V; 12A diffused silicon rectifier diode. For general pusposes: for battery chargers, converters, power supplies, machine tool controls |
International Rectifier |
219 |
1307028 |
Dipole Antenna for ISM Band |
Tyco Electronics |
220 |
1307031 |
2.4 GHz Patch Antenna for ISM Band |
Tyco Electronics |
221 |
1415-2 |
2 W, 20 V, 1430-1540 MHz common base transistor |
GHz Technology |
222 |
1415-7 |
7 W, 20 V, 1430-1540 MHz common base transistor |
GHz Technology |
223 |
1416-1 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
224 |
1416-100 |
100 W, 50 V, 1400-1600 MHz common base transistor |
GHz Technology |
225 |
1416-3 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
226 |
1417-12A |
12 W, 28 V, 1400-1700 MHz common base transistor |
GHz Technology |
227 |
1417-6A |
6 W, 28 V, 1400-1700 MHz common base transistor |
GHz Technology |
228 |
1516-35 |
35 W, 28 V, 1450-1550 MHz common base transistor |
GHz Technology |
229 |
15SB03S |
15A schottky barrier diode |
NEC |
230 |
15SB04M |
15A schottky barrier diode |
NEC |
231 |
15SB04S |
15A schottky barrier diode |
NEC |
232 |
1618-35 |
35 W, 28 V, 1600-1800 MHz common base transistor |
GHz Technology |
233 |
1620B |
LED BACKLIGHT FOR LCD DISPLAY |
Micro Electronics |
234 |
1620G |
LED BACKLIGHT FOR LCD DISPLAY |
Micro Electronics |
235 |
1623G |
LED BACKLIGHT FOR LCD DISPLAY |
Micro Electronics |
236 |
1623R |
LED BACKLIGHT FOR LCD DISPLAY |
Micro Electronics |
237 |
1623RO |
LED BACKLIGHT FOR LCD DISPLAY |
Micro Electronics |
238 |
1623Y |
LED BACKLIGHT FOR LCD DISPLAY |
Micro Electronics |
239 |
1641G |
LED BACKLIGHT FOR LCD DISPLAY |
Micro Electronics |
240 |
169-14 |
Midget flanged base lens-end lamp. 2.50V, 0.340A, 1000Lux. |
Gilway Technical Lamp |
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