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Datasheets for BAS

Datasheets found :: 9337
Page: | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 |
No. Part Name Description Manufacturer
211 AM81416-006 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
212 AM81416-012 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
213 AM81416-020 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
214 AM82022-020 Common base NPN silicon power transistor for telemetry applications SGS Thomson Microelectronics
215 AM82223-004 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
216 AM82223-012 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
217 AM82223-014 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
218 AM82223-018 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
219 AM82223-020 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
220 AM82324-020 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.3-2.4GHz SGS Thomson Microelectronics
221 AM82327-004 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
222 AM82327-006 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
223 AM82327-015 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
224 AMP374P6453BT1-C1H 64M X 72 SDRAM DIMM with ECC based on 32M X 8, 4 Banks, 8K REFRESH, 3.3V Synchronous DRAMs etc
225 AMP374P6453BT1-C1HS 64M X 72 SDRAM DIMM with ECC based on 32M X 8, 4 Banks, 8K REFRESH, 3.3V Synchronous DRAMs etc
226 AMP374P6453BT1C1H 64M X 72 SDRAM DIMM with ECC based on 32M X 8, 4 Banks, 8K REFRESH, 3.3V Synchronous DRAMs etc
227 AN1007 L6561 - BASED SWITCHER REPLACES MAG AMPS IN SILVER BOXES SGS Thomson Microelectronics
228 AN1059 DESIGN EQUATIONS OF HIGH-POWER-FACTOR FLYBACK CONVERTERS BASED ON THE L6561 SGS Thomson Microelectronics
229 AN1300 L6598 BASED 12V/3A RESONANT APPLICATION SGS Thomson Microelectronics
230 AN1305 CURRENT MEASUREMENT AND LIMITATION IN TD340 BASED MOTOR CONTROL SYSTEMS SGS Thomson Microelectronics
231 AN1348 ST485: A RS-485 BASED INTERFACE WITH LOWER DATA BIT ERRORS SGS Thomson Microelectronics
232 AN1374 VIPOWER: COMPLEMENTARY DOUBLE OUTPUT NON ISOLATED POWER SUPPLY BASED ON VIPER12A SGS Thomson Microelectronics
233 AN1491 IGBT BASICS (UPDATED VERSION OF AN521) SGS Thomson Microelectronics
234 AN1534 TS971 BASED ELECTRET CONDENSER MICROPHONE AMPLIFIER SGS Thomson Microelectronics
235 AN1539 VIPOWER: LOW COST UNIVERSAL INPUT SMPS FOR DIGITAL SET-TOP BOX BASED ON VIPER50 SGS Thomson Microelectronics
236 AN192 The GNU based ARM-LINUX Toolchain for use with Royal Linux Cirrus Logic
237 AN253 POWER SUPPLY DESIGN BASICS SGS Thomson Microelectronics
238 AN377 TEA5101A-RGB HIGH VOLTAGE AMPLIFIER BASIC OPERATION AND APPLICATIONS SGS Thomson Microelectronics
239 AN450 PC BASED DEVOLOPMENT SYSTEM CUTS DESIGN TIME OF SMART POWER IC APPLICATION SGS Thomson Microelectronics
240 AN509 INFLUENCE OF GATE AND BASE DRIVE ON POWER SWITCH BEHAVIOUR SGS Thomson Microelectronics


Datasheets found :: 9337
Page: | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 |



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