| No. |
Part Name |
Description |
Manufacturer |
| 211 |
AP16083C |
In ra-red emitting diode. 1.6mm x 0.8mm SMT LED. Peak wavelength 940 nm. Lens type water clear. |
Kingbright Electronic |
| 212 |
AP1608F3C |
In ra-red emitting diode. Lens type water clear. |
Kingbright Electronic |
| 213 |
AP1608S4C |
In ra-red emitting diode. 1.6mm x 0.8mm SMT LED. Peak wavelength 880 nm. Lens type water clear. |
Kingbright Electronic |
| 214 |
AP1608SF4C |
In ra-red emitting diode. Lens type water clear. |
Kingbright Electronic |
| 215 |
AP2012F3C |
2.0x1.25mm INFRA-RED EMITTING DIODE |
Kingbright Electronic |
| 216 |
AP2012SF4C |
In ra-red emitting diode. 2.0 x 1.2mm SMT LED. Peak wavelength 880 nm. Lens type water clear. |
Kingbright Electronic |
| 217 |
APK3020SURC |
DH InGaAIP on GaAs substrate Light Emitting Diode. |
Kingbright Electronic |
| 218 |
APL3015F3C |
F3 Made with Gallium Arsenide Infrared Emitting diodes. |
Kingbright Electronic |
| 219 |
APL3015SF4C |
In ra-red emitting diode. 3.0 x 1.5 mm SMT LED. Lens type water clear. |
Kingbright Electronic |
| 220 |
APP NOTE |
Application Note - Techniques for Obtaining Optimum Performance from Ring Emitter Transistors |
Fujitsu Microelectronics |
| 221 |
APP NOTE |
Application Note - a 50KHz 200W Half-Bridge Switching Power Supply Using Ring Emitter Transistors |
Fujitsu Microelectronics |
| 222 |
APT2012SGC |
Gallium Phosphide Green Light Emitting Diode. |
Kingbright Electronic |
| 223 |
AT-31625 |
4.8 V NPN Common Emitter Medium Power Output Transistor |
Agilent (Hewlett-Packard) |
| 224 |
AT-31625-BLK |
4.8 V NPN Common Emitter Medium Power Output Transistor |
Agilent (Hewlett-Packard) |
| 225 |
AT-31625-TR1 |
4.8 V NPN Common Emitter Medium Power Output Transistor |
Agilent (Hewlett-Packard) |
| 226 |
AT-33225 |
4.8 V NPN Common Emitter Output Power Transistor for AMPS, ETACS Phones |
Agilent (Hewlett-Packard) |
| 227 |
AT-33225-BLK |
4.8 V NPN Common Emitter Output Power Transistor for AMPS, ETACS Phones |
Agilent (Hewlett-Packard) |
| 228 |
AT-33225-TR1 |
4.8 V NPN Common Emitter Output Power Transistor for AMPS, ETACS Phones |
Agilent (Hewlett-Packard) |
| 229 |
AT-36408 |
4.8 V NPN Common Emitter Output Power Transistor for GSM Class IV Phones |
Agilent (Hewlett-Packard) |
| 230 |
AT-36408-BLK |
4.8 V NPN Common Emitter Output Power Transistor for GSM Class IV Phones |
Agilent (Hewlett-Packard) |
| 231 |
AT-36408-TR1 |
4.8 V NPN Common Emitter Output Power Transistor for GSM Class IV Phones |
Agilent (Hewlett-Packard) |
| 232 |
AT-38086 |
4.8 V NPN Silicon Bipolar Common Emitter Transistor |
Agilent (Hewlett-Packard) |
| 233 |
AT-38086-BLK |
4.8 V NPN Silicon Bipolar Common Emitter Transistor |
Agilent (Hewlett-Packard) |
| 234 |
AT-38086-TR1 |
4.8 V NPN Silicon Bipolar Common Emitter Transistor |
Agilent (Hewlett-Packard) |
| 235 |
BC237 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 50V. Collector-emitter voltage Vceo = 45V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. |
USHA India LTD |
| 236 |
BC238 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. |
USHA India LTD |
| 237 |
BC239 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. |
USHA India LTD |
| 238 |
BC307 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
| 239 |
BC308 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
| 240 |
BC309 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
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