| No. |
Part Name |
Description |
Manufacturer |
| 211 |
2SC5431-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 212 |
2SC5432-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 213 |
2SC5433-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 214 |
2SC5434-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 215 |
2SC5435-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 216 |
2SC5436-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 217 |
2SC5437-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 218 |
2SC5477 |
150mW SMD NPN transistor, maximum rating: 20V Vceo, 50mA Ic, 50 to (typ)148 hFE. High Frequency Amplification |
Isahaya Electronics Corporation |
| 219 |
2SC5621 |
FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 220 |
2SC5636 |
FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 221 |
2SC5659T2L |
NPN High frequency Transistor |
ROHM |
| 222 |
2SC5661T2L |
NPN High frequency Transistor |
ROHM |
| 223 |
2SC5662T2L |
NPN High frequency Transistor |
ROHM |
| 224 |
2SC594 |
Silicon NPN epitaxial high frequency transistor |
TOSHIBA |
| 225 |
2SC784 |
Silicon NPN epitaxial planar transistor, FM Tuner and High Frequency amplifier applications |
TOSHIBA |
| 226 |
2SC785 |
Silicon NPN epitaxial planar transistor, FM Tuner and High Frequency amplifier applications |
TOSHIBA |
| 227 |
2SC815 |
LOW FREQUENCY AMPLIFIER HIGH FREQUENCY OSCILLAR |
USHA India LTD |
| 228 |
2SC941TM |
Transistor Silicon NPN Epitaxial Type (PCT process) High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications |
TOSHIBA |
| 229 |
2SC941TM |
Transistor Silicon NPN Epitaxial Type (PCT process) High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications |
TOSHIBA |
| 230 |
2SC942 |
NPN EPITAXIAL TYPE (HIGH/ AM/ AM HIGH FREQUENCY AMPLIFIER CONVERTER APPLICATIONS) |
TOSHIBA |
| 231 |
2SC942TM |
NPN EPITAXIAL TYPE (HIGH/ AM/ AM HIGH FREQUENCY AMPLIFIER CONVERTER APPLICATIONS) |
TOSHIBA |
| 232 |
2SC945 |
Transistor. Audio frequency amplifier high frequency osc. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 50V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 150mA. |
USHA India LTD |
| 233 |
2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification |
Panasonic |
| 234 |
2SK1875 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications |
TOSHIBA |
| 235 |
2SK1875 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications |
TOSHIBA |
| 236 |
2SK709 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications |
TOSHIBA |
| 237 |
2SK709 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications |
TOSHIBA |
| 238 |
2SK710 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications |
TOSHIBA |
| 239 |
2SK710 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications |
TOSHIBA |
| 240 |
2SK711 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications |
TOSHIBA |
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