| No. |
Part Name |
Description |
Manufacturer |
| 211 |
2N2489 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 212 |
2N2573 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 213 |
2N2574 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 214 |
2N2575 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 215 |
2N2576 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 216 |
2N2577 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 217 |
2N2578 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 218 |
2N2579 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 219 |
2N2710 |
NPN small signal high speed low power saturated switch transistor. |
Fairchild Semiconductor |
| 220 |
2N2795 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 221 |
2N2796 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 222 |
2N2797 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 223 |
2N2798 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 224 |
2N2799 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 225 |
2N2894 |
Transistor, high speed saturated switches |
SGS-ATES |
| 226 |
2N2894DCSM |
DUAL HIGH SPEED, MEDIUM POWER, PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE |
SemeLAB |
| 227 |
2N2904 |
Silicon PNP epitaxial planar transistor for high speed switching applications and amplifier circuits |
AEG-TELEFUNKEN |
| 228 |
2N2904 |
Transistor, high speed saturated switches |
SGS-ATES |
| 229 |
2N2904A |
Silicon PNP epitaxial planar transistor for high speed switching applications and amplifier circuits |
AEG-TELEFUNKEN |
| 230 |
2N2904A |
Transistor, high speed saturated switches |
SGS-ATES |
| 231 |
2N2905 |
Silicon PNP epitaxial planar transistor for high speed switching applications and amplifier circuits |
AEG-TELEFUNKEN |
| 232 |
2N2905 |
Transistor, high speed saturated switches |
SGS-ATES |
| 233 |
2N2905A |
Silicon PNP epitaxial planar transistor for high speed switching applications and amplifier circuits |
AEG-TELEFUNKEN |
| 234 |
2N2905A |
Transistor, high speed saturated switches |
SGS-ATES |
| 235 |
2N2906 |
Silicon PNP epitaxial planar transistors for high speed switching applications and for amplifier circuits |
AEG-TELEFUNKEN |
| 236 |
2N2906 |
Transistor, high speed saturated switches |
SGS-ATES |
| 237 |
2N2906A |
Silicon PNP epitaxial planar transistors for high speed switching applications and for amplifier circuits |
AEG-TELEFUNKEN |
| 238 |
2N2906A |
Silicon transistor, high speed saturated switches |
SGS-ATES |
| 239 |
2N2907 |
Silicon PNP epitaxial planar transistors for high speed switching applications and for amplifier circuits |
AEG-TELEFUNKEN |
| 240 |
2N2907 |
Silicon transistor, high speed saturated switches |
SGS-ATES |
| | | |
