| No. |
Part Name |
Description |
Manufacturer |
| 211 |
2N2401 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 212 |
2N2402 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 213 |
2N2475 |
Transistor, high speed saturated switches |
SGS-ATES |
| 214 |
2N2487 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 215 |
2N2488 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 216 |
2N2489 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 217 |
2N2710 |
NPN small signal high speed low power saturated switch transistor. |
Fairchild Semiconductor |
| 218 |
2N2795 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 219 |
2N2796 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 220 |
2N2797 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 221 |
2N2798 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 222 |
2N2799 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 223 |
2N2894 |
Transistor, high speed saturated switches |
SGS-ATES |
| 224 |
2N2904 |
Silicon PNP epitaxial planar transistor for high speed switching applications and amplifier circuits |
AEG-TELEFUNKEN |
| 225 |
2N2904 |
Transistor, high speed saturated switches |
SGS-ATES |
| 226 |
2N2904A |
Silicon PNP epitaxial planar transistor for high speed switching applications and amplifier circuits |
AEG-TELEFUNKEN |
| 227 |
2N2904A |
Transistor, high speed saturated switches |
SGS-ATES |
| 228 |
2N2905 |
Silicon PNP epitaxial planar transistor for high speed switching applications and amplifier circuits |
AEG-TELEFUNKEN |
| 229 |
2N2905 |
Transistor, high speed saturated switches |
SGS-ATES |
| 230 |
2N2905A |
Silicon PNP epitaxial planar transistor for high speed switching applications and amplifier circuits |
AEG-TELEFUNKEN |
| 231 |
2N2905A |
Transistor, high speed saturated switches |
SGS-ATES |
| 232 |
2N2906 |
Silicon PNP epitaxial planar transistors for high speed switching applications and for amplifier circuits |
AEG-TELEFUNKEN |
| 233 |
2N2906 |
Transistor, high speed saturated switches |
SGS-ATES |
| 234 |
2N2906A |
Silicon PNP epitaxial planar transistors for high speed switching applications and for amplifier circuits |
AEG-TELEFUNKEN |
| 235 |
2N2906A |
Silicon transistor, high speed saturated switches |
SGS-ATES |
| 236 |
2N2907 |
Silicon PNP epitaxial planar transistors for high speed switching applications and for amplifier circuits |
AEG-TELEFUNKEN |
| 237 |
2N2907 |
Silicon transistor, high speed saturated switches |
SGS-ATES |
| 238 |
2N2907A |
Silicon PNP epitaxial planar transistors for high speed switching applications and for amplifier circuits |
AEG-TELEFUNKEN |
| 239 |
2N2907A |
Silicon transistor, high speed saturated switches |
SGS-ATES |
| 240 |
2N2942 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
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