No. |
Part Name |
Description |
Manufacturer |
211 |
IRF9362PBF-1 |
-30V Dual P Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
212 |
IRF9362TRPBF-1 |
-30V Dual P Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
213 |
IRF9394M |
-30V Dual P Channel HEXFET Power MOSFET in a DirectFET MC package |
International Rectifier |
214 |
IRF9394MTRPBF |
-30V Dual P Channel HEXFET Power MOSFET in a DirectFET MC package |
International Rectifier |
215 |
IRF9Z20 |
(IRF9Z24) P Channel Power MOSFET |
Samsung Electronic |
216 |
IRFD9020 |
HEXFET TRANSISTORS P CHANNEL HEXDIP |
International Rectifier |
217 |
IRFD9022 |
HEXFET TRANSISTORS P CHANNEL HEXDIP |
International Rectifier |
218 |
IRHLUC7970Z4 |
60V 100kRad Hi-Rel Dual P Channel TID Hardened MOSFET in a LCC-6 package |
International Rectifier |
219 |
IRHLUC7970Z4SCS |
60V 100kRad Hi-Rel Dual P Channel TID Hardened MOSFET in a LCC-6 package |
International Rectifier |
220 |
KMB7D0NP30QA |
N & P channel Trench MOSFET |
Korea Electronics (KEC) |
221 |
MMBF2201PT1 |
LOW RDS SMALL SIGNAL MOSFETS TMOS SINGLE P CHANNEL FIELD EFFECT TRANSISTORS |
Motorola |
222 |
MMBF2202PT3 |
LOW RDS SMALL SIGNAL MOSFETS TMOS SINGLE P CHANNEL FIELD EFFECT TRANSISTORS |
Motorola |
223 |
MP4203 |
TOSHIBA POWER MOS FET MODULE SILICON P CHANNEL MOS TYPE |
TOSHIBA |
224 |
MP4207 |
N & P CHANNEL MOS TYPE (HIGH POWER HIGH SPEED SWITCHING APPLICATIONS, H - SWITCH DRIVER) |
TOSHIBA |
225 |
MP4208 |
Power MOS FET Module Silicon P Channel MOS Type (L2-pi-MOSV 4 in 1) High Power High Speed Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
226 |
MP6801 |
Power MOS FET Module Silicon N / P Channel MOS Type |
TOSHIBA |
227 |
NDC7001C_Q |
Dual N & P Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
228 |
NDH854P |
Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity P Channel Current Id cont. 5.1 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V |
Fairchild Semiconductor |
229 |
NTLJD2104P |
Power MOSFET, 12V, 4.3A, 90mOhm Dual P Channel WDFN2x2 |
ON Semiconductor |
230 |
NTS2101P |
Small Signal MOSFET -8 V, -1.4 A, Single P Channel SC-70 |
ON Semiconductor |
231 |
SI4532DY_NL |
Dual N & P Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
232 |
SSM3J01F |
Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications |
TOSHIBA |
233 |
SSM3J01T |
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications |
TOSHIBA |
234 |
SSM3J02F |
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications |
TOSHIBA |
235 |
SSM3J02T |
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications |
TOSHIBA |
236 |
SSM3J05FU |
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications |
TOSHIBA |
237 |
SSM3J09FU |
Field Effect Transistor Silicon P Channel MOS Type Management Switch High Speed Switching Applications |
TOSHIBA |
238 |
SSM3J13T |
Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) Power Management Switch High Speed Switching Applications |
TOSHIBA |
239 |
SSM3J14T |
Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) Power Management Switch DC-DC Converters |
TOSHIBA |
240 |
SSM5G01TU |
Silicon P Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Planar Diode DC-DC Converter for DSCs and Camcorders |
TOSHIBA |
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