| No. |
Part Name |
Description |
Manufacturer |
| 211 |
2SB365 |
Germanium PNP alloy junction transistor, audio power amplifier applications |
TOSHIBA |
| 212 |
2SB415 |
Germanium PNP alloy junction transistor, medium power amplifier applications |
TOSHIBA |
| 213 |
2SB435 |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 214 |
2SB461 |
Germanium PNP alloy junction transistor, audio medium power amplifier, strobo flash applications |
TOSHIBA |
| 215 |
2SB502 |
Silicon PNP epitaxial MESA transistor, audio power amplifier, regulator applications |
TOSHIBA |
| 216 |
2SB503 |
Silicon PNP epitaxial MESA transistor, audio power amplifier, regulator applications |
TOSHIBA |
| 217 |
2SB507 |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 218 |
2SB507D |
PLANAR TYPE SILICON TRANSISTOR FOR AF POWER AMPLIFIER USE |
SANYO |
| 219 |
2SB508 |
PLANAR TYPE SILICON TRANSISTOR FOR AF POWER AMPLIFIER USE |
SANYO |
| 220 |
2SB509 |
For AF Power Amplifier Use |
Unknow |
| 221 |
2SB514 |
PNP Triple Diffused Planar Silicon Transistors 50V/2A Low-Frequency Power Amplifier Applications |
SANYO |
| 222 |
2SB536 |
Audio Frequency power amplifier and low speed switching silicon epitaxial transistor |
NEC |
| 223 |
2SB536 |
Audio Frequency Power Amplifier,Low Speed Switching |
Unknow |
| 224 |
2SB537 |
Audio Frequency power amplifier and low speed switching silicon epitaxial transistor |
NEC |
| 225 |
2SB537 |
Audio Frequency Power Amplifier,Low Speed Switching |
Unknow |
| 226 |
2SB539A |
Audio frequency power amplifier silicon triple diffused MESA transistor |
NEC |
| 227 |
2SB539B |
Audio frequency power amplifier silicon triple diffused MESA transistor |
NEC |
| 228 |
2SB539C |
Audio frequency power amplifier silicon triple diffused MESA transistor |
NEC |
| 229 |
2SB541 |
Audio frequency power amplifier PNP/NPN silicon triple diffused MESA transistor |
NEC |
| 230 |
2SB548 |
PNP/NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS |
NEC |
| 231 |
2SB548 |
Audio Frequency Power Amplifier |
Unknow |
| 232 |
2SB56 |
Germanium PNP alloy junction transistor, audio low power amplifier applications |
TOSHIBA |
| 233 |
2SB564A |
Audio frequency power amplifier. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 800mW. Collector current Ic = -1.0A. |
USHA India LTD |
| 234 |
2SB595 |
Silicon PNP triple diffused power amplifier |
TOSHIBA |
| 235 |
2SB595 |
LOW FREQUENCY POWER AMPLIFIER(PNP EPITAXUAL) |
Wing Shing Computer Components |
| 236 |
2SB596 |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 237 |
2SB600 |
Audio frequency power amplifier silicon triple diffused transistor |
NEC |
| 238 |
2SB624 |
AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 239 |
2SB624R |
PNP silicon epitaxial transistor designed for use in audio frequency power amplifiers |
NEC |
| 240 |
2SB628 |
Silicon epitaxial transistor, audio frequency power amplifier and low speed switching |
NEC |
| | | |
