| No. |
Part Name |
Description |
Manufacturer |
| 211 |
MGF0952P |
L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ] |
Mitsubishi Electric Corporation |
| 212 |
MT8930C |
4 wire full-duplex 2B+D (192Kb/s) data format ISDN S and T Subscriber Network Interface Circuit with controllerless mode |
Zarlink Semiconductor |
| 213 |
MT8931C |
4 wire full-duplex 2B+D (192Kb/s) data format ISDN S and T Subscriber Network Interface Circuit |
Zarlink Semiconductor |
| 214 |
MUR805 |
8 Amp S uper Fast Glass Passivated R ec tif ie r 50 to 400 Volts |
Micro Commercial Components |
| 215 |
MUR810 |
8 Amp S uper Fast Glass Passivated R ec tif ie r 50 to 400 Volts |
Micro Commercial Components |
| 216 |
MUR820 |
8 Amp S uper Fast Glass Passivated R ec tif ie r 50 to 400 Volts |
Micro Commercial Components |
| 217 |
MUR840 |
8 Amp S uper Fast Glass Passivated R ec tif ie r 50 to 400 Volts |
Micro Commercial Components |
| 218 |
ND3048 |
Yellow/red, 25 V, 10 mA, S to K-band GaAs varactor diode |
NEC |
| 219 |
ND3049 |
Yellow/blue, 25 V, 10 mA, S to K-band GaAs varactor diode |
NEC |
| 220 |
ND3050 |
Yellow/black, 25 V, 10 mA, S to K-band GaAs varactor diode |
NEC |
| 221 |
ND3138(1) |
Green/red, 25 V, 10 mA, S to K-band GaAs varactor diode |
NEC |
| 222 |
ND3138(2) |
Green/red, 25 V, 10 mA, S to K-band GaAs varactor diode |
NEC |
| 223 |
NE34018 |
L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
NEC |
| 224 |
NE34018-T1 |
L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
NEC |
| 225 |
NE34018-T1-63 |
GaAs HJ-FET L to S band low noise amplifier. Idss range 30-65 mA. |
NEC |
| 226 |
NE34018-T1-64 |
GaAs HJ-FET L to S band low noise amplifier. Idss range 60-120 mA. |
NEC |
| 227 |
NE34018-T2 |
L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
NEC |
| 228 |
NE38018 |
L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET |
NEC |
| 229 |
NE38018-T1 |
L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET |
NEC |
| 230 |
NE38018-T1-67 |
GaAs HJ-FET L to S band low noise amplifier. Idss range 40-90 mA. |
NEC |
| 231 |
NE38018-T1-68 |
GaAs HJ-FET L to S band low noise amplifier. Idss range 70-170 mA. |
NEC |
| 232 |
NE38018-T2 |
L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET |
NEC |
| 233 |
NE52118 |
L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT |
NEC |
| 234 |
NE52118-T1 |
L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT |
NEC |
| 235 |
NE52418-T1 |
L to S band low noise amplifier NPN GaAs HBT. |
NEC |
| 236 |
NE76118 |
L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET |
NEC |
| 237 |
NE76118-T1 |
L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET |
NEC |
| 238 |
NE76118-T2 |
L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET |
NEC |
| 239 |
ROB563 |
Point Contact microwave detector diode, S Band |
CCSIT-CE |
| 240 |
S1A050000 |
Reed Relay, S Type |
Cosmo Electronics |
| | | |
