No. |
Part Name |
Description |
Manufacturer |
211 |
16F100 |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
212 |
16F100R |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
213 |
16F10R |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
214 |
16F120 |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
215 |
16F120R |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
216 |
16F20 |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
217 |
16F20R |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
218 |
16F40 |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
219 |
16F40R |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
220 |
16F60 |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
221 |
16F60R |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
222 |
16F80 |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
223 |
16F80R |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
224 |
16FL2C41A |
HIGH EFFICIENCY DIODE STACK (HED) |
TOSHIBA |
225 |
16FL2CZ47A |
HIGH EFFICIENCY DIODE STACK (HED) |
TOSHIBA |
226 |
16FWJ2C42 |
SCHOTTKY BARRIER RECTIFIER STACK (HIGH SPEED RECTIFIER APPLICATIONS) |
TOSHIBA |
227 |
16GWJ2C42 |
SCHOTTKY BARRIER RECTIFIER STACK (SWITCHING TYPE POWER SUPPLY APPLICATION.) |
TOSHIBA |
228 |
16GWJ2CZ47 |
SCHOTTKY BARRIER RECTIFIER STACK (SWITCHING TYPE POWER SUPPLY APPLICATION) |
TOSHIBA |
229 |
173D |
Solid Tantalum Capacitors, Solid Electrolyte Tantalex, Axial Leaded, Molded Case, Standard Range |
Vishay |
230 |
195D |
Solid Tantalum Chip Capacitors, Conformal, Industrial Grade, TANTAMOUNT® Tantalum Chips with Conformal Terminals, Minimum size, Meets IEC Specification QC300801/US0002, 2 Standard Electroplate Terminations |
Vishay |
231 |
1B4B42 |
RECTIFIER STACK (SINGLE PHASE BRIDGE RECTIFIER APPLICATIONS) |
TOSHIBA |
232 |
1CE-402 |
Operating Considerations for RCA Solid State Devices - Application Note |
RCA Solid State |
233 |
1CE-402 |
Operating Considerations for RCA Solid State Devices - Application Note |
RCA Solid State |
234 |
1G4B42 |
RECTIFIER STACK (SINGLE PHASE BRIDGE RECTIFIER APPLICATIONS) |
TOSHIBA |
235 |
1J4B42 |
RECTIFIER STACK (SINGLE PHASE BRIDGE RECTIFIER APPLICATIONS) |
TOSHIBA |
236 |
1N1095 |
Diffused-Junction Silicon Rectifier, flanged-case, axial-lead-type |
RCA Solid State |
237 |
1N1124A |
200 V, 3 A standard recovery rectifier |
Solid State Devices Inc |
238 |
1N1124A |
200 V, 3 A standard recovery rectifier |
Solid State Devices Inc |
239 |
1N1125A |
300 V, 3 A standard recovery rectifier |
Solid State Devices Inc |
240 |
1N1125A |
300 V, 3 A standard recovery rectifier |
Solid State Devices Inc |
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