No. |
Part Name |
Description |
Manufacturer |
211 |
2322 66. 93. . . |
PTC Thermistors, Time Delay For Lighting |
Vishay |
212 |
2436 |
COUNT DOWN POWER TIMER |
Allegro MicroSystems |
213 |
24C64 |
Supervisory Circuit swith I2C Serial CMOS E2PROM / Precision Reset Controller and Watchdog Timer |
Catalyst Semiconductor |
214 |
28C256AJC-1 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. |
Turbo IC |
215 |
28C256AJC-2 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. |
Turbo IC |
216 |
28C256AJC-3 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
Turbo IC |
217 |
28C256AJC-4 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
Turbo IC |
218 |
28C256AJI-1 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. |
Turbo IC |
219 |
28C256AJI-2 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. |
Turbo IC |
220 |
28C256AJI-3 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
Turbo IC |
221 |
28C256AJI-4 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
Turbo IC |
222 |
28C256AJM-1 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. |
Turbo IC |
223 |
28C256AJM-2 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. |
Turbo IC |
224 |
28C256AJM-3 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
Turbo IC |
225 |
28C256AJM-4 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
Turbo IC |
226 |
28C256APC-1 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. |
Turbo IC |
227 |
28C256APC-2 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. |
Turbo IC |
228 |
28C256APC-3 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
Turbo IC |
229 |
28C256APC-4 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
Turbo IC |
230 |
28C256API-1 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. |
Turbo IC |
231 |
28C256API-2 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. |
Turbo IC |
232 |
28C256API-3 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
Turbo IC |
233 |
28C256API-4 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
Turbo IC |
234 |
28C256APM-1 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. |
Turbo IC |
235 |
28C256APM-2 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. |
Turbo IC |
236 |
28C256APM-3 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
Turbo IC |
237 |
28C256APM-4 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
Turbo IC |
238 |
28C256ASC-1 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. |
Turbo IC |
239 |
28C256ASC-2 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. |
Turbo IC |
240 |
28C256ASC-3 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
Turbo IC |
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