| No. |
Part Name |
Description |
Manufacturer |
| 211 |
2N4146 |
Thyristors and Triggers |
Semitronics |
| 212 |
2N4146 |
Reverse Blocking Triode Thyristor-SCR |
Transitron Electronic |
| 213 |
2N4147 |
Reverse Blocking Triode Thyristor-SCR |
Transitron Electronic |
| 214 |
2N4148 |
Reverse Blocking Triode Thyristor-SCR |
Transitron Electronic |
| 215 |
2N4149 |
Reverse Blocking Triode Thyristor-SCR |
Transitron Electronic |
| 216 |
2N4240 |
NPN Power Transistor Triple Diffused - Fast switching |
SESCOSEM |
| 217 |
2N4332 |
Reverse Blocking Triode Thyristor-SCR |
Transitron Electronic |
| 218 |
2N4333 |
Reverse Blocking Triode Thyristor-SCR |
Transitron Electronic |
| 219 |
2N4334 |
Reverse Blocking Triode Thyristor-SCR |
Transitron Electronic |
| 220 |
2N4335 |
Reverse Blocking Triode Thyristor-SCR |
Transitron Electronic |
| 221 |
2N4336 |
Reverse Blocking Triode Thyristor-SCR |
Transitron Electronic |
| 222 |
2N4337 |
Reverse Blocking Triode Thyristor-SCR |
Transitron Electronic |
| 223 |
2N4398 |
Silicon PNP triple diffused power transistor |
TOSHIBA |
| 224 |
2N4399 |
Silicon PNP triple diffused power transistor |
TOSHIBA |
| 225 |
2N5038 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
| 226 |
2N5038 |
Silicon NPN triple diffused power transistor |
TOSHIBA |
| 227 |
2N5039 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
| 228 |
2N5039 |
Silicon NPN triple diffused power transistor |
TOSHIBA |
| 229 |
2N5060 |
Reverse Blocking Triode Thyristor (SCR) TO92 EPOXY PACKAGE |
Transitron Electronic |
| 230 |
2N5061 |
Reverse Blocking Triode Thyristor (SCR) TO92 EPOXY PACKAGE |
Transitron Electronic |
| 231 |
2N5062 |
Reverse Blocking Triode Thyristor (SCR) TO92 EPOXY PACKAGE |
Transitron Electronic |
| 232 |
2N5063 |
Reverse Blocking Triode Thyristor (SCR) TO92 EPOXY PACKAGE |
Transitron Electronic |
| 233 |
2N5064 |
Reverse Blocking Triode Thyristor (SCR) TO92 EPOXY PACKAGE |
Transitron Electronic |
| 234 |
2N5301 |
Silicon NPN triple diffused power transistor |
TOSHIBA |
| 235 |
2N5302 |
Silicon NPN triple diffused power transistor |
TOSHIBA |
| 236 |
2N5303 |
Silicon NPN triple diffused power transistor |
TOSHIBA |
| 237 |
2N5431 |
Silicon annular unijunction transistor characterized primarily for low interbase-voltage operation in sensing, pulse triggering, and timing circuits |
Motorola |
| 238 |
2N5441 |
40-A Silicon Triacs |
General Electric Solid State |
| 239 |
2N5441 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 200 V. |
Motorola |
| 240 |
2N5441 |
40A Silicon Triac |
RCA Solid State |
| | | |
