| No. |
Part Name |
Description |
Manufacturer |
| 211 |
1N5830 |
25A, 25V ultra fast recovery rectifier |
MCC |
| 212 |
1N5831 |
25A, 35V ultra fast recovery rectifier |
MCC |
| 213 |
1N6095 |
25A, 30V ultra fast recovery rectifier |
MCC |
| 214 |
1N6096 |
25A, 40V ultra fast recovery rectifier |
MCC |
| 215 |
1N914 |
100V ultra fast recovery rectifier |
MCC |
| 216 |
1N914 |
Silicon epitaxial planar diode, ultra high speed switching applications |
TOSHIBA |
| 217 |
1N914A |
75 V, 500 mW high conductance ultra fast switching diode |
BKC International Electronics |
| 218 |
1N914A |
100V ultra fast recovery rectifier |
MCC |
| 219 |
1N914A |
Silicon epitaxial planar diode, ultra high speed switching applications |
TOSHIBA |
| 220 |
1N914B |
75 V, 500 mW high conductance ultra fast switching diode |
BKC International Electronics |
| 221 |
1N914B |
100V ultra fast recovery rectifier |
MCC |
| 222 |
1N914B |
Silicon epitaxial planar diode, ultra high speed switching applications |
TOSHIBA |
| 223 |
1N916 |
Silicon epitaxial planar diode, ultra high speed switching applications |
TOSHIBA |
| 224 |
1N916A |
75 V, 500 mW high conductance ultra fast switching diode |
BKC International Electronics |
| 225 |
1N916A |
Silicon epitaxial planar diode, ultra high speed switching applications |
TOSHIBA |
| 226 |
1N916B |
75 V, 500 mW high conductance ultra fast switching diode |
BKC International Electronics |
| 227 |
1N916B |
Silicon epitaxial planar diode, ultra high speed switching applications |
TOSHIBA |
| 228 |
1SS181 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 229 |
1SS184 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 230 |
1SS187 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 231 |
1SS190 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 232 |
1SS193 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 233 |
1SS196 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 234 |
1SS200 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 235 |
1SS201 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 236 |
1SS226 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 237 |
1SS250 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 238 |
1SS272 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 239 |
1SS300 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications |
TOSHIBA |
| 240 |
1SS301 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications |
TOSHIBA |
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