No. |
Part Name |
Description |
Manufacturer |
211 |
2N3055 |
NPN power transistor, 100V, 15A |
SemeLAB |
212 |
2N3055H |
NPN silicon power transistor. 15Amp, 100V, 115Watt. These devices are designed for general purpose switching and amplifier applications. |
USHA India LTD |
213 |
2N3056 |
NPN power transistor, 100V, 15A |
SemeLAB |
214 |
2N3390 |
NPN silicon transistor. 25V, 100mA. |
General Electric Solid State |
215 |
2N3391 |
NPN silicon transistor. 25V, 100mA. |
General Electric Solid State |
216 |
2N3391A |
NPN silicon transistor. 25V, 100mA. |
General Electric Solid State |
217 |
2N3392 |
NPN silicon transistor. 25V, 100mA. |
General Electric Solid State |
218 |
2N3393 |
NPN silicon transistor. 25V, 100mA. |
General Electric Solid State |
219 |
2N3394 |
NPN silicon transistor. 25V, 100mA. |
General Electric Solid State |
220 |
2N3700 |
0.500W General Purpose NPN Metal Can Transistor. 80V Vceo, 1.000A Ic, 100 - 300 hFE. |
Continental Device India Limited |
221 |
2N3704 |
0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.600A Ic, 100 - 300 hFE |
Continental Device India Limited |
222 |
2N3707 |
0.360W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.200A Ic, 100 - 400 hFE |
Continental Device India Limited |
223 |
2N3713 |
80 V, 10 A, 150 W, NPN silicon power transistor |
Texas Instruments |
224 |
2N3714 |
100 V, 10 A, 150 W, NPN silicon power transistor |
Texas Instruments |
225 |
2N3715 |
80 V, 10 A, 150 W, NPN silicon power transistor |
Texas Instruments |
226 |
2N3716 |
100 V, 10 A, 150 W, NPN silicon power transistor |
Texas Instruments |
227 |
2N3859 |
Planar epitaxial passivated NPN silicon transistor. 30V, 100mA. |
General Electric Solid State |
228 |
2N3859A |
Planar epitaxial passivated NPN silicon transistor. 60V, 100mA. |
General Electric Solid State |
229 |
2N3860 |
Planar epitaxial passivated NPN silicon transistor. 30V, 100mA. |
General Electric Solid State |
230 |
2N3870 |
SCRs 35 Ampere RMS, 100V |
Motorola |
231 |
2N4032 |
0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 100 - 300 hFE. |
Continental Device India Limited |
232 |
2N4033 |
0.800W RF PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 100 - 300 hFE. |
Continental Device India Limited |
233 |
2N4214 |
SCRs 1.6 Ampere RMS, 100V |
Motorola |
234 |
2N4347 |
High voltage silicon N-P-N transistor. 140V, 100W. |
General Electric Solid State |
235 |
2N5007 |
100 V, 10 A high speed PNP transistor |
Solid State Devices Inc |
236 |
2N5009 |
100 V, 10 A high speed PNP transistor |
Solid State Devices Inc |
237 |
2N5172 |
0.400W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.150A Ic, 100 - 500 hFE |
Continental Device India Limited |
238 |
2N5172 |
NPN silicon transistor. 25V, 100mA. |
General Electric Solid State |
239 |
2N5232 |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
240 |
2N5232A |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
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