| No. |
Part Name |
Description |
Manufacturer |
| 211 |
2N6266 |
10-, 16-, 30-, and 60-Watt Broadband (620-to-960-MHz) Power Amplifiers Using the RCA-2N6266 and 2N6267 Microwave Power Transistors - App. Note |
RCA Solid State |
| 212 |
2N6267 |
10-, 16-, 30-, and 60-Watt Broadband (620-to-960-MHz) Power Amplifiers Using the RCA-2N6266 and 2N6267 Microwave Power Transistors - App. Note |
RCA Solid State |
| 213 |
2N6288 |
40.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 7.000A Ic, 30 - 150 hFE. Complementary 2N6111 |
Continental Device India Limited |
| 214 |
2N6322 |
200 V, 30 A NPN high voltage/high energy |
Solid State Devices Inc |
| 215 |
2N6324 |
200 V, 30 A NPN high voltage/high energy |
Solid State Devices Inc |
| 216 |
2N6516 |
0.625W General Purpose NPN Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 30 - hFE |
Continental Device India Limited |
| 217 |
2N6519 |
0.625W General Purpose PNP Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 30 - hFE |
Continental Device India Limited |
| 218 |
2N6619 |
12 V, 30 mA, NPN silicon transistor for low-noise RF broadband amplifier and high-speed switching application |
Siemens |
| 219 |
2N6676 |
NPN silicon power transistor. 15 A, 300 V, 175 W. |
Motorola |
| 220 |
2N7002 |
60 V, 300 mA N-channel Trench MOSFET |
Nexperia |
| 221 |
2N7002 |
60 V, 300 mA N-channel Trench MOSFET |
NXP Semiconductors |
| 222 |
2N7002BKS |
60 V, 300 mA dual N-channel Trench MOSFET |
Nexperia |
| 223 |
2N7002BKS |
60 V, 300 mA dual N-channel Trench MOSFET |
NXP Semiconductors |
| 224 |
2N708 |
0.360W General Purpose NPN Metal Can Transistor. 15V Vceo, 0.200A Ic, 30 - 120 hFE. |
Continental Device India Limited |
| 225 |
2SC3053 |
150mW SMD NPN transistor, maximum rating: 25V Vceo, 30mA Ic, 35 to 180 hFE. correspond 2SC710 |
Isahaya Electronics Corporation |
| 226 |
2SC5058S |
25V,50mA, 300MHz high-frequency amplifier transistor |
ROHM |
| 227 |
2SC5245A |
RF Transistor, 10V, 30mA, fT=8GHz, NPN Single MCP |
ON Semiconductor |
| 228 |
2SC5384 |
125mW SMD NPN transistor, maximum rating: 25V Vceo, 30mA Ic, 35 to 180 hFE. |
Isahaya Electronics Corporation |
| 229 |
2SC5551A |
RF Transistor, 30V, 300mA, fT=3.5GHz, NPN Single PCP |
ON Semiconductor |
| 230 |
2SC5551A |
RF Transistor, 30V, 300mA, fT=3.5GHz, NPN Single PCP |
ON Semiconductor |
| 231 |
2SJ553STR |
P-channel MOSFET for high speed power switching, 60V, 30A |
Renesas |
| 232 |
2SK1277 |
N-Channel MOS-FET(250V, 0.12Ohm, 30A, 150W) |
Fuji Electric |
| 233 |
2SK241GR |
N-channel MOS transistor for FM tuner, VHF and RF amplifier applications, 20V, 30mA |
TOSHIBA |
| 234 |
2SK241O |
N-channel MOS transistor for FM tuner, VHF and RF amplifier applications, 20V, 30mA |
TOSHIBA |
| 235 |
2SK241Y |
N-channel MOS transistor for FM tuner, VHF and RF amplifier applications, 20V, 30mA |
TOSHIBA |
| 236 |
2SK3666 |
N-Channel JFET, 30V, 0.6 to 6.0mA, 6.5mS, CP |
ON Semiconductor |
| 237 |
2SK3703 |
N-Channel Power MOSFET, 60V, 30A, 26mOhm, TO-220F-3SG |
ON Semiconductor |
| 238 |
2SK3796 |
N-Channel JFET, 30V, 0.6 to 6.0mA, 6.5mS, SMCP |
ON Semiconductor |
| 239 |
3001 |
1 W, 28 V, 3000 MHz common base transistor |
GHz Technology |
| 240 |
300190-9 , 300210-12 (2R, 3R, 4R) |
2 Resistors through X Resistors |
Vishay |
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