| No. |
Part Name |
Description |
Manufacturer |
| 211 |
2N3867 |
1.000W General Purpose PNP Metal Can Transistor. 40V Vceo, 3.000A Ic, 40 - 200 hFE. |
Continental Device India Limited |
| 212 |
2N3872 |
SCRs 35 Ampere RMS, 400V |
Motorola |
| 213 |
2N3904 |
0.625W General Purpose NPN Plastic Leaded Transistor. 40V Vceo, 0.200A Ic, 40 - hFE |
Continental Device India Limited |
| 214 |
2N4030 |
0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 215 |
2N4031 |
0.800W RF PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 216 |
2N4219 |
SCRs 1.6 Ampere RMS, 400V |
Motorola |
| 217 |
2N4234 |
6.000W General Purpose PNP Metal Can Transistor. 40V Vceo, 1.000A Ic, 40 hFE. |
Continental Device India Limited |
| 218 |
2N4235 |
6.000W General Purpose PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 40 hFE. |
Continental Device India Limited |
| 219 |
2N4236 |
6.000W General Purpose PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 40 hFE. |
Continental Device India Limited |
| 220 |
2N4401 |
0.625W Switching NPN Plastic Leaded Transistor. 40V Vceo, 0.600A Ic, 40 hFE. |
Continental Device India Limited |
| 221 |
2N4898 |
Medium-power PNP silicon power transistor. 4 A, 40 V, 25 W. |
Motorola |
| 222 |
2N5089 |
0.625W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.050A Ic, 400 - 1200 hFE |
Continental Device India Limited |
| 223 |
2N5191 |
40.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 25 - 100 hFE. |
Continental Device India Limited |
| 224 |
2N5192 |
40.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 7 hFE. |
Continental Device India Limited |
| 225 |
2N5294 |
36.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 4.000A Ic, 30 - 120 hFE. |
Continental Device India Limited |
| 226 |
2N5296 |
36.000W Medium Power NPN Plastic Leaded Transistor. 40V Vceo, 4.000A Ic, 30 - 120 hFE. |
Continental Device India Limited |
| 227 |
2N5298 |
36.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 20 - 80 hFE. |
Continental Device India Limited |
| 228 |
2N5321 |
10.000W Switching NPN Metal Can Transistor. 50V Vceo, 2.000A Ic, 40 - 250 hFE. |
Continental Device India Limited |
| 229 |
2N5344 |
High voltage power PNP silicon transistor. 1 A, 250 V, 40 W. |
Motorola |
| 230 |
2N5400 |
0.500W General Purpose PNP Plastic Leaded Transistor. 120V Vceo, 0.600A Ic, 40 - hFE |
Continental Device India Limited |
| 231 |
2N5445 |
TRIACs 40 Ampere RMS, 400V |
Motorola |
| 232 |
2N5918 |
10W, 400-MHz High-Gain Silicon NPN Emitter-Ballasted Overaly RF Transistor |
RCA Solid State |
| 233 |
2N5919A |
16W, 400-MHz, Silicon NPN Emitter-Ballasted Overlay Transistor |
RCA Solid State |
| 234 |
2N5954 |
Silicon P-N-P medium-power transistor. -90V, 40W. |
General Electric Solid State |
| 235 |
2N5955 |
Silicon P-N-P medium-power transistor. -70V, 40W. |
General Electric Solid State |
| 236 |
2N5956 |
Silicon P-N-P medium-power transistor. -50V, 40W. |
General Electric Solid State |
| 237 |
2N6027 |
Silicon programmable unijunction transistor, 40V, 150mA |
Planeta |
| 238 |
2N6028 |
Silicon programmable unijunction transistor, 40V, 150mA |
Planeta |
| 239 |
2N6034 |
PNP medium power darlington transistor, 4A , 40V |
SGS Thomson Microelectronics |
| 240 |
2N6034 |
PNP medium power darlington transistor, 4A , 40V |
SGS Thomson Microelectronics |
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