No. |
Part Name |
Description |
Manufacturer |
211 |
2N5657 |
0.5A Plastic NPN silicon, High Voltage Power Transistor |
Motorola |
212 |
2N5671 |
High-current, high-power, high-speed silicon N-P-N planar transistor. |
General Electric Solid State |
213 |
2N5671 |
High-current, high-power, high-speed silicon N-P-N planar transistor. |
General Electric Solid State |
214 |
2N5672 |
High-current, high-power, high-speed silicon N-P-N planar transistor. |
General Electric Solid State |
215 |
2N5672 |
High-current, high-power, high-speed silicon N-P-N planar transistor. |
General Electric Solid State |
216 |
2N5758 |
High-Voltage, High-Power NPN silicon transistor 6A |
Motorola |
217 |
2N5759 |
High-Voltage, High-Power NPN silicon transistor 6A |
Motorola |
218 |
2N5760 |
High-Voltage, High-Power NPN silicon transistor 6A |
Motorola |
219 |
2N5838 |
High-voltage, high-power silicon N-P-N power transistor. |
General Electric Solid State |
220 |
2N5838 |
HIGH-VOLTAGE, HIGH-POWER SILICON N-P-N POWER TRANSISTORS |
Motorola |
221 |
2N5839 |
High-voltage, high-power silicon N-P-N power transistor. |
General Electric Solid State |
222 |
2N5839 |
HIGH-VOLTAGE, HIGH-POWER SILICON N-P-N POWER TRANSISTORS |
Motorola |
223 |
2N5840 |
High-voltage, high-power silicon N-P-N power transistor. |
General Electric Solid State |
224 |
2N5840 |
HIGH-VOLTAGE, HIGH-POWER SILICON N-P-N POWER TRANSISTORS |
Motorola |
225 |
2N5885 |
High-current, high-power, high-speed power transistor. 60V, 200W. |
General Electric Solid State |
226 |
2N5885 |
High-current, high-power, high-speed power transistor. 60V, 200W. |
General Electric Solid State |
227 |
2N5886 |
High-current, high-power, high-speed power transistor. 80V, 200W. |
General Electric Solid State |
228 |
2N5886 |
High-current, high-power, high-speed power transistor. 80V, 200W. |
General Electric Solid State |
229 |
2N5911 |
Wideband, High Gain, Monolithic Dual, N- Channel JFET |
Linear Systems |
230 |
2N5912 |
Wideband, High Gain, Monolithic Dual, N- Channel JFET |
Linear Systems |
231 |
2N5912C |
Wideband, High Gain, Monolithic Dual, N- Channel JFET |
Linear Systems |
232 |
2N6030 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
233 |
2N6031 |
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
234 |
2N6032 |
High-current, high-power, high-speed silicon N-P-N transistor. |
General Electric Solid State |
235 |
2N6032 |
High-current, high-power, high-speed silicon N-P-N transistor. |
General Electric Solid State |
236 |
2N6033 |
High-current, high-power, high-speed silicon N-P-N transistor. |
General Electric Solid State |
237 |
2N6033 |
High-current, high-power, high-speed silicon N-P-N transistor. |
General Electric Solid State |
238 |
2N6034 |
W Medium Power PNP Plastic Leaded Transistor. 40V Vceo, A Ic, hFE. |
Continental Device India Limited |
239 |
2N6039 |
W Medium Power NPN Plastic Leaded Transistor. 40V Vceo, A Ic, hFE. |
Continental Device India Limited |
240 |
2N6077 |
High-voltage, high-power silicon N-P-N transistor. |
General Electric Solid State |
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