| No. |
Part Name |
Description |
Manufacturer |
| 211 |
74CB3Q3253RGYRG4 |
Dual 1-of-4 FET Multiplexer/Demultiplexer 2.5-V/3.3-V Low-Voltage High-Bandwidth Bus Switch 16-VQFN -40 to 85 |
Texas Instruments |
| 212 |
74CB3Q3257DBQRE4 |
4-Bit One-of-2 FET Multiplexer/Demultiplexer 2.5-V/3.3-V Low-Voltage, High-Bandwidth Bus Switch 16-SSOP -40 to 85 |
Texas Instruments |
| 213 |
74CB3Q3257DBQRG4 |
4-Bit One-of-2 FET Multiplexer/Demultiplexer 2.5-V/3.3-V Low-Voltage, High-Bandwidth Bus Switch 16-SSOP -40 to 85 |
Texas Instruments |
| 214 |
74CB3Q3257RGYRG4 |
4-Bit One-of-2 FET Multiplexer/Demultiplexer 2.5-V/3.3-V Low-Voltage, High-Bandwidth Bus Switch 16-VQFN -40 to 85 |
Texas Instruments |
| 215 |
74CB3Q3305DCURG4 |
Dual FET Bus Switch 2.5-V/3.3-V Low-Voltage, High-Bandwidth 8-VSSOP -40 to 85 |
Texas Instruments |
| 216 |
74CB3Q3306ADCURE4 |
Dual FET 2.5-V/3.3-V Low-Voltage, High-Bandwidth Bus Switch 8-VSSOP -40 to 85 |
Texas Instruments |
| 217 |
74CB3Q3306ADCURG4 |
Dual FET 2.5-V/3.3-V Low-Voltage, High-Bandwidth Bus Switch 8-VSSOP -40 to 85 |
Texas Instruments |
| 218 |
81406 |
28V, Class C, common base NPN bipolar transistor designed for general purpose amplifier applications in the UHF and L-Band |
SGS Thomson Microelectronics |
| 219 |
81410 |
28V, Class C, common base NPN bipolar transistor designed for UHF and L-Band |
SGS Thomson Microelectronics |
| 220 |
82729-30 |
High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 221 |
82729-60 |
High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 222 |
82731-1 |
Medium Power Silicon bipolar NPN transistor designed for S-Band radar pulsed driver applications |
SGS Thomson Microelectronics |
| 223 |
82731-75 |
High Power Silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 224 |
82931-55 |
High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 225 |
82931-55N |
High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 226 |
82931-55S |
High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 227 |
83135-3 |
Medium power silicon bipolar NPN transistor designed for S-Band radar pulsed driver applications |
SGS Thomson Microelectronics |
| 228 |
AAY39 |
Germanium point contact mixing diode for the X-band |
VALVO |
| 229 |
AAY39A |
Germanium point contact mixing diode for the X-band |
VALVO |
| 230 |
AAY50 |
Germanium point contact mixing diode for the X-band |
VALVO |
| 231 |
AAY50R |
Germanium point contact mixing diode for the X-band |
VALVO |
| 232 |
AAY56 |
Germanium point contact mixing diode for the S-band |
VALVO |
| 233 |
AAY56R |
Germanium point contact mixing diode for the S-band |
VALVO |
| 234 |
AB-186 |
CURRENT OR VOLTAGE FEEDBACK: THE CHOICE IS YOURS WITH THE NEW, FLEXIBLE, WIDE-BAND OPERATIONAL AMPLIFIER OPA622. |
Burr Brown |
| 235 |
AB-188 |
BUILDING A 400MHz WIDE-BAND DIFFERENTIAL AMPLIFIER: IT'S A BREEZE WITH THE DIAMOND TRANSISTOR OPA660. |
Burr Brown |
| 236 |
ACPM-7891 |
ACPM-7891 · Tri-band GPRS (Class10) GSM PA |
Agilent (Hewlett-Packard) |
| 237 |
ACX-01A |
Microwave Horn X-band Antenna for miniature radar systems |
Philips |
| 238 |
AD637A |
High Precision, Wide-Band RMS-to-DC Converter |
Analog Devices |
| 239 |
AD637AQ |
High Precision, Wide-Band RMS-to-DC Converter |
Analog Devices |
| 240 |
AD637AR |
High Precision, Wide-Band RMS-to-DC Converter |
Analog Devices |
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