| No. |
Part Name |
Description |
Manufacturer |
| 211 |
BFW17A |
NPN silicon multi-emitter transistor with the collector coneected to the case |
Philips |
| 212 |
BFW30 |
NPN multi-emitter high-frequency transistor |
Philips |
| 213 |
BFW92 |
Epitaxial planar NPN transistor designed for wide band common-emitter linear amplifier applications up to 1GHz |
SGS-ATES |
| 214 |
BSP50 |
NPN Silicon Darlington Transistors (High collector current Low collector-emitter saturation voltage) |
Siemens |
| 215 |
BSP50BSP52 |
NPN Silicon Darlington Transistors (High collector current Low collector-emitter saturation voltage) |
Siemens |
| 216 |
BSP51 |
NPN Silicon Darlington Transistors (High collector current Low collector-emitter saturation voltage) |
Siemens |
| 217 |
BSP52 |
NPN Silicon Darlington Transistors (High collector current Low collector-emitter saturation voltage) |
Siemens |
| 218 |
BSP60 |
PNP Silicon Darlington Transistors (High collector current Low collector-emitter saturation voltage) |
Siemens |
| 219 |
BSP60BSP62 |
PNP Silicon Darlington Transistors (High collector current Low collector-emitter saturation voltage) |
Siemens |
| 220 |
BSP61 |
PNP Silicon Darlington Transistors (High collector current Low collector-emitter saturation voltage) |
Siemens |
| 221 |
BSP62 |
PNP Silicon Darlington Transistors (High collector current Low collector-emitter saturation voltage) |
Siemens |
| 222 |
BSS64 |
NPN Silicon AF and Switching Transistor (High breakdown voltage Low collector-emitter saturation voltage) |
Siemens |
| 223 |
BSS79 |
NPN Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) |
Siemens |
| 224 |
BSS79B |
NPN Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) |
Siemens |
| 225 |
BSS79C |
NPN Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) |
Siemens |
| 226 |
BSS80 |
PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) |
Siemens |
| 227 |
BSS80B |
PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) |
Siemens |
| 228 |
BSS80C |
PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) |
Siemens |
| 229 |
BSS81B |
NPN Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) |
Siemens |
| 230 |
BSS81C |
NPN Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) |
Siemens |
| 231 |
BSS82B |
PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) |
Siemens |
| 232 |
BSS82C |
PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) |
Siemens |
| 233 |
BSY79 |
NPN silicon epitaxy planar transistor with high collector-emitter voltage, suitable as a driver transistor for number display glow tubes |
ITT Semiconductors |
| 234 |
BU406H |
NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V. |
Wing Shing Computer Components |
| 235 |
BU408 |
NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V. |
Wing Shing Computer Components |
| 236 |
BUD44D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS |
ON Semiconductor |
| 237 |
BUL44D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network |
ON Semiconductor |
| 238 |
BUL45D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network |
ON Semiconductor |
| 239 |
BUT14 |
25A NPN silicon power darlington transistor with BASE-EMITTER speedup diode 850V 175W SWITCHMODE series |
Motorola |
| 240 |
BUT15 |
20A NPN silicon power darlington transistor with BASE-EMITTER speedup diode 1000V 175W SWITCHMODE series |
Motorola |
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