No. |
Part Name |
Description |
Manufacturer |
211 |
2N5430 |
Medium-power NPN silicon transistor |
Motorola |
212 |
2N5477 |
7 Ampere 60W medium-power NPN silicon transistor |
Motorola |
213 |
2N5478 |
7 Ampere 60W medium-power NPN silicon transistor |
Motorola |
214 |
2N5479 |
7 Ampere 60W medium-power NPN silicon transistor |
Motorola |
215 |
2N5480 |
7 Ampere 60W medium-power NPN silicon transistor |
Motorola |
216 |
2N5575 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
217 |
2N5576 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
218 |
2N5577 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
219 |
2N5578 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
220 |
2N5579 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
221 |
2N5580 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
222 |
2N5629 |
Silicon N-P-N epitaxial-base high-power transistor. 100V, 200W. |
General Electric Solid State |
223 |
2N5630 |
Silicon N-P-N epitaxial-base high-power transistor. 120V, 200W. |
General Electric Solid State |
224 |
2N5630 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
225 |
2N5631 |
Silicon N-P-N epitaxial-base high-power transistor. 140V, 200W. |
General Electric Solid State |
226 |
2N5631 |
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
227 |
2N5631 |
High-Voltage High-Power Transistors |
ON Semiconductor |
228 |
2N5632 |
10A complementary silicon high-voltage, high-power NPN transistor 150W |
Motorola |
229 |
2N5633 |
10A complementary silicon high-voltage, high-power NPN transistor 150W |
Motorola |
230 |
2N5634 |
10A complementary silicon high-voltage, high-power NPN transistor 150W |
Motorola |
231 |
2N5671 |
High-current, high-power, high-speed silicon N-P-N planar transistor. |
General Electric Solid State |
232 |
2N5672 |
High-current, high-power, high-speed silicon N-P-N planar transistor. |
General Electric Solid State |
233 |
2N5745 |
PNP SILICON HIGH-POWER TRANSISTORS |
Boca Semiconductor Corporation |
234 |
2N5758 |
High-Voltage, High-Power NPN silicon transistor 6A |
Motorola |
235 |
2N5759 |
High-Voltage, High-Power NPN silicon transistor 6A |
Motorola |
236 |
2N5760 |
High-Voltage, High-Power NPN silicon transistor 6A |
Motorola |
237 |
2N5838 |
High-voltage, high-power silicon N-P-N power transistor. |
General Electric Solid State |
238 |
2N5838 |
HIGH-VOLTAGE, HIGH-POWER SILICON N-P-N POWER TRANSISTORS |
Motorola |
239 |
2N5839 |
High-voltage, high-power silicon N-P-N power transistor. |
General Electric Solid State |
240 |
2N5839 |
HIGH-VOLTAGE, HIGH-POWER SILICON N-P-N POWER TRANSISTORS |
Motorola |
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