No. |
Part Name |
Description |
Manufacturer |
211 |
NX8567SAM393-CC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 360 km DWDM applications. ITU-T wavelength 1539.371 nm. Frequency 194.75 THz. SC-UPC connector. |
NEC |
212 |
NX8567SAS393-BC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1539.371 nm. Frequency 194.75 THz. FC-UPC connector. |
NEC |
213 |
NX8567SAS393-CC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1539.371 nm. Frequency 194.75 THz. SC-UPC connector. |
NEC |
214 |
NX8570SC393-BA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (20 mW min). ITU-T wavelength 1539.371 nm. Frequency 194.75 THz. FC-PC connector. |
NEC |
215 |
NX8570SC393-CA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (20 mW min). ITU-T wavelength 1539.371 nm. Frequency 194.75 THz. SC-PC connector. |
NEC |
216 |
NX8571SC393-BA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (10 mW min). ITU-T wavelength 1539.371 nm. Frequency 194.75 THz. FC-PC connector. |
NEC |
217 |
NX8571SC393-CA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (10 mW min). ITU-T wavelength 1539.371 nm. Frequency 194.75 THz. SC-PC connector. |
NEC |
218 |
P4KE9.1 |
Diode TVS Single Uni-Dir 7.37V 400W 2-Pin DO-41 |
New Jersey Semiconductor |
219 |
P4KE9.1C |
Diode TVS Single Bi-Dir 7.37V 400W 2-Pin DO-41 |
New Jersey Semiconductor |
220 |
P6KE9.1 |
Diode TVS Single Uni-Dir 7.37V 600W Automotive 2-Pin DO-15 |
New Jersey Semiconductor |
221 |
P6KE9.1C |
Diode TVS Single Bi-Dir 7.37V 600W 2-Pin DO-15 |
New Jersey Semiconductor |
222 |
PG12856-A |
128x56 dots; dot size:0.41 x 0.37mm; dot pitch:0.45 x 0.41mm; LCD monitor |
Powertip Technology |
223 |
ROB317 |
General Purpose Voltage Regulator, output range of 1.25...37V |
CCSIT-CE |
224 |
SB160S |
Schottky barrier rectifier. Max recurrent peak reverse voltage 60 V. Max average forward rectified current 0.375inches lead length at Ta = 75degC 1.0 A. |
Panjit International Inc |
225 |
SG531P7.3728M |
Crystal oscillator, 7.3728MHz |
Epson Company |
226 |
SG531P7.3728M |
Crystal oscillator, 7.3728MHz |
Epson Company |
227 |
SP730EK-4.375 |
Microprocessor Supervisory Circuit with Pull Up Resistor |
Sipex Corporation |
228 |
SP730EK-4.375-L |
Microprocessor Supervisory with Pull Up Resistor |
Sipex Corporation |
229 |
SP730EK-4.375-L/TR |
Microprocessor Supervisory with Pull Up Resistor |
Sipex Corporation |
230 |
SP730EK-4.375/TR |
Microprocessor Supervisory Circuit with Pull Up Resistor |
Sipex Corporation |
231 |
STB13N80K5 |
N-channel 800 V, 0.37 Ohm typ., 12 A MDmesh K5 Power MOSFET in D2PAK package |
ST Microelectronics |
232 |
STD11NM60N |
N-channel 600 V, 0.37 Ohm, 10 A MDmesh(TM) II Power MOSFET in a DPAK package |
ST Microelectronics |
233 |
STD11NM60ND |
N-channel 600V - 0.37Ohm - 10A - FDmesh II Power MOSFET DPAK |
ST Microelectronics |
234 |
STF11NM60ND |
N-channel 600V - 0.37Ohm - 10A - FDmesh II Power MOSFET TO-220FP |
ST Microelectronics |
235 |
STF13N80K5 |
N-channel 800 V, 0.37 Ohm typ., 12 A MDmesh K5 Power MOSFET in TO-220FP package |
ST Microelectronics |
236 |
STP11NM60N |
N-channel 600 V, 0.37 Ohm, 10 A MDmesh(TM) II Power MOSFET in TO-220 package |
ST Microelectronics |
237 |
STP11NM60ND |
N-channel 600V - 0.37Ohm - 10A - FDmesh II Power MOSFET TO-220 |
ST Microelectronics |
238 |
STP13N80K5 |
N-channel 800 V, 0.37 Ohm typ., 12 A MDmesh K5 Power MOSFET in TO-220 package |
ST Microelectronics |
239 |
STW13N80K5 |
N-channel 800 V, 0.37 Ohm typ., 12 A MDmesh K5 Power MOSFET in TO-247 package |
ST Microelectronics |
240 |
T-51383L070J-FW-P-AA |
1440 x 234dots; dot pitch:0.107 x 0.372mm; 0.3-7.0V; 0.15mA LCD module |
Optrex Corporation |
| | | |