| No. |
Part Name |
Description |
Manufacturer |
| 211 |
2722 162 05411 |
Circulators/Isolators 2000 to 2700 MHz |
Philips |
| 212 |
2722 162 05471 |
Circulators/Isolators 1900 to 2300 MHz |
Philips |
| 213 |
2722 162 06111 |
VHF/UHF Broadband Circulators/Isolators, frequency range 600 to 960 MHz |
Philips |
| 214 |
2N6071 |
TRIACs 4 AMPERES RMS 200 thru 600 VOLTS |
Motorola |
| 215 |
2N6071A |
TRIACs 4 AMPERES RMS 200 thru 600 VOLTS |
Motorola |
| 216 |
2N6071B |
TRIACs 4 AMPERES RMS 200 thru 600 VOLTS |
Motorola |
| 217 |
2N6073A |
TRIACs 4 AMPERES RMS 200 thru 600 VOLTS |
Motorola |
| 218 |
2N6073B |
TRIACs 4 AMPERES RMS 200 thru 600 VOLTS |
Motorola |
| 219 |
2N6075A |
TRIACs 4 AMPERES RMS 200 thru 600 VOLTS |
Motorola |
| 220 |
2N6075B |
TRIACs 4 AMPERES RMS 200 thru 600 VOLTS |
Motorola |
| 221 |
2SC3246 |
900mW Lead frame NPN transistor, maximum rating: 25V Vceo, 1.5A Ic, 400 to 3000 hFE. Complementary 2SA1286 |
Isahaya Electronics Corporation |
| 222 |
2SC6046 |
200mW SMD NPN transistor, maximum rating: 40V Vceo, 600mA Ic, 100 to 300 hFE. |
Isahaya Electronics Corporation |
| 223 |
30KPA102 |
Diode TVS Single Uni-Dir 102V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 224 |
30KPA102A |
Diode TVS Single Uni-Dir 102V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 225 |
30KPA102C |
Diode TVS Single Bi-Dir 102V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 226 |
30KPA102CA |
Diode TVS Single Bi-Dir 102V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 227 |
30KPA108 |
Diode TVS Single Uni-Dir 108V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 228 |
30KPA108A |
Diode TVS Single Uni-Dir 108V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 229 |
30KPA108C |
Diode TVS Single Bi-Dir 108V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 230 |
30KPA108CA |
Diode TVS Single Bi-Dir 108V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 231 |
30KPA120 |
Diode TVS Single Uni-Dir 120V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 232 |
30KPA120A |
Diode TVS Single Uni-Dir 120V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 233 |
30KPA120C |
Diode TVS Single Bi-Dir 120V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 234 |
30KPA120CA |
Diode TVS Single Bi-Dir 120V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 235 |
30KPA130 |
Diode TVS Single Bi-Dir 132V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 236 |
30KPA132 |
Diode TVS Single Uni-Dir 132V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 237 |
30KPA132A |
Diode TVS Single Uni-Dir 132V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 238 |
30KPA132C |
Diode TVS Single Bi-Dir 132V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 239 |
30KPA132CA |
Diode TVS Single Bi-Dir 132V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 240 |
30KPA144 |
Diode TVS Single Uni-Dir 144V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
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