| No. |
Part Name |
Description |
Manufacturer |
| 211 |
DSC1124NI1-100.0000 |
Clock and Timing - Oscillators |
Microchip |
| 212 |
DSC1124NI1-100.0000T |
Clock and Timing - Oscillators |
Microchip |
| 213 |
DSC1124NL2-100.0000T |
Clock and Timing - Oscillators |
Microchip |
| 214 |
DV16275 |
CHARACTER LCD MODULE display format: 16x2; module size: 100.0x39x13.0; viewing size: 80.0x20.4; dot size: 0.75x0.90; character size: 4.07x7.76; |
Data International CO.LTD. |
| 215 |
DV16276 |
CHARACTER LCD MODULE display format: 16x2; module size: 100.0x39x13.0; viewing size: 80.0x20.4; dot size: 0.75x0.90; character size: 4.07x7.76; |
Data International CO.LTD. |
| 216 |
EA430 |
Ultra bright red, right angle, quad LED. Lens diffused. Max.luminous intensity at 20mA: 300.0mcd. Typ. forward voltage at 20mA 1.85V. |
Gilway Technical Lamp |
| 217 |
ETM4-1T-2 |
00.05 - 3.072 MHz E-Series RF 4:1 Transformer |
Tyco Electronics |
| 218 |
MAX20-100.0C |
100.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 219 |
MAX20-100.0C |
100.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 220 |
MAX20-100.0CA |
100.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 221 |
MAX20-100.0CA |
100.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 222 |
MAX40-100.0C |
100.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 223 |
MAX40-100.0C |
100.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 224 |
MAX40-100.0CA |
100.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 225 |
MAX40-100.0CA |
100.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 226 |
MQF100.0-1500/06 |
Monolithic Crystal Filter, Selected customer types |
Vectron |
| 227 |
MV1650 |
Silicon Epicap diode, epitaxial passivated tuning diode designed for AFC applications in radio, TV, 100.0pF |
Motorola |
| 228 |
MV2115 |
Voltage-Variable Capacitance Silicon EPICAP Diode, 30 Volts 100.0pF |
Motorola |
| 229 |
NTE5285AK |
50 watt zener diode, +-5% tolerance. Nominal zener voltage Vz = 100.0V. Zener test current Izt = 120mA. |
NTE Electronics |
| 230 |
NTE5296AK |
50 watt zener diode, +-5% tolerance. Nominal zener voltage Vz = 200.0V. Zener test current Izt = 65mA. |
NTE Electronics |
| 231 |
P4KE350A |
300.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 232 |
P4KE350A-T3 |
Reverse stand-off voltage: 300.00V transient voltage suppressor |
Won-Top Electronics |
| 233 |
P4KE350A-TB |
Reverse stand-off voltage: 300.00V transient voltage suppressor |
Won-Top Electronics |
| 234 |
P4KE350CA |
400 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 300.00 V. Test current IT = 1 mA. |
Bytes |
| 235 |
P4KE350CA |
300.00V; 400W transient voltage suppressor |
Diodes |
| 236 |
P4KE350CA-T3 |
Reverse stand-off voltage: 300.00V transient voltage suppressor |
Won-Top Electronics |
| 237 |
P4KE350CA-TB |
Reverse stand-off voltage: 300.00V transient voltage suppressor |
Won-Top Electronics |
| 238 |
P4SMAJ100-T1 |
Reverse stand-off voltage: 100.00V surface mount transient voltage suppressor |
Won-Top Electronics |
| 239 |
P4SMAJ100-T3 |
Reverse stand-off voltage: 100.00V surface mount transient voltage suppressor |
Won-Top Electronics |
| 240 |
P4SMAJ100A-T1 |
Reverse stand-off voltage: 100.00V surface mount transient voltage suppressor |
Won-Top Electronics |
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