| No. |
Part Name |
Description |
Manufacturer |
| 211 |
MBRT600100 |
High Power Schottky Rectifiers - Three Tower Modules |
America Semiconductor |
| 212 |
MCM40100 |
1M x 40 Bit Dynamic Random Access Memory Module |
Motorola |
| 213 |
MD0100 |
Ultrasound T/R Switch ICs |
Microchip |
| 214 |
MD50100 |
100 V, 50 A, rectifier automotive diode |
TRANSYS Electronics Limited |
| 215 |
MDL50100 |
100 V, 50 A, rectifier automotive diode |
TRANSYS Electronics Limited |
| 216 |
MJ10100 |
NPN Silicon Power Darlington transistor 500W 450V 100A |
Motorola |
| 217 |
ML670100 |
High-performance CMOS 32-bit single chip microcontroller |
OKI electronic components |
| 218 |
ML670100 |
OKIs High-Performance CMOS 32-Bit Single Chip Microcontroller |
OKI electronic componets |
| 219 |
MLO80100 |
Surface Mount Voltage Controlled Oscillator EGSM 920 - 960 MHz |
Tyco Electronics |
| 220 |
MS10100 |
Schottky Rectifier |
Microsemi |
| 221 |
MSA-0100 |
Cascadable Silicon Bipolar MMIC Amplifier |
Agilent (Hewlett-Packard) |
| 222 |
MSA-0100 |
MODAMP™ Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers |
AVANTEK |
| 223 |
NCL30100 |
Fixed Off Time Buck LED Driver Controller |
ON Semiconductor |
| 224 |
NCV890100 |
Automotive Switching Regulator, Buck, 1.2 A, 2 MHz |
ON Semiconductor |
| 225 |
NE800100 |
C-BAND Medium Power GaAs MESFET |
NEC |
| 226 |
NE8500100 |
1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
NEC |
| 227 |
NE900100 |
Ku-BAND medium POWER GaAs MESFET |
NEC |
| 228 |
NE90100 |
PNP medium power microwave transistor |
NEC |
| 229 |
NT6868A-10100 |
Keyboard Controller |
Novatek |
| 230 |
PBYR10100 |
Rectifier diodes Schottky barrier |
Philips |
| 231 |
PBYR20100 |
Rectifier diodes Schottky barrier |
Philips |
| 232 |
PM2-30100 |
OutputV:2Vdc; inputV:85-264V; 30W; LoPAC family: PFC mini power factor corrected, AC-DC switcher |
Vicor Corporation |
| 233 |
PM2-40100 |
OutputV:2Vdc; inputV:85-264V; 40W; LoPAC family: PFC mini power factor corrected, AC-DC switcher |
Vicor Corporation |
| 234 |
PTF10100 |
165 Watts, 860�900 MHz LDMOS Field Effect Transistor |
Ericsson Microelectronics |
| 235 |
R20100 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
| 236 |
RHRG30100 |
30A, 1000V Hyperfast Diode |
Fairchild Semiconductor |
| 237 |
RHRG30100 |
30A/ 1000V Hyperfast Diode |
Intersil |
| 238 |
RHRG50100 |
50A, 1000V Hyperfast Diode |
Fairchild Semiconductor |
| 239 |
RHRG50100 |
50A/ 1000V Hyperfast Diode |
Intersil |
| 240 |
RHRP30100 |
30A, 1000V Hyperfast Diode |
Fairchild Semiconductor |
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