| No. |
Part Name |
Description |
Manufacturer |
| 211 |
2N1030A |
Germanium PNP Transistor |
Motorola |
| 212 |
2N1030B |
Germanium PNP Transistor |
Motorola |
| 213 |
2N1030C |
Germanium PNP Transistor |
Motorola |
| 214 |
2N2030 |
V(rrm/drm): 400V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 215 |
2N2030 |
Silicon Controlled Rectifier |
Microsemi |
| 216 |
2N2030 |
THYRISTOR |
Motorola |
| 217 |
2N2030 |
Thyristor SCR 400V 1.4KA 4-Pin TO-94 |
New Jersey Semiconductor |
| 218 |
2N2483 |
Chip: geometry 0307; polarity NPN |
Semicoa Semiconductor |
| 219 |
2N2484 |
Chip: 6.0V; geometry 0307; polarity NPN |
Semicoa Semiconductor |
| 220 |
2N2920 |
Chip Type 2C2484 Geometry 0307 Polarity NPN |
Semicoa Semiconductor |
| 221 |
2N3030 |
Silicon Controlled Rectifier |
Microsemi |
| 222 |
2N3030 |
THYRISTOR |
Motorola |
| 223 |
2N4030 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 224 |
2N4030 |
0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 225 |
2N4030 |
PNP small signal general purpose amplifier. |
Fairchild Semiconductor |
| 226 |
2N4030 |
Silicon PNP Epitaxial-Planar Transistor (in german) |
ITT Semiconductors |
| 227 |
2N4030 |
PNP SILICON AF MEDIUM POWER AMPLIFIERS AND SWITCHES |
Micro Electronics |
| 228 |
2N4030 |
Silicon PNP Transistor |
Motorola |
| 229 |
2N4030 |
Trans GP BJT PNP 60V 3-Pin TO-39 Box |
New Jersey Semiconductor |
| 230 |
2N4030 |
Silicon transistor, general purpose amplifiers and switches |
SGS-ATES |
| 231 |
2N5030 |
Silicon NPN Transistor |
Motorola |
| 232 |
2N6030 |
COMPLEMENTARY SILICON POWER TRANSISTORS |
Central Semiconductor |
| 233 |
2N6030 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 234 |
2N6030 |
Trans GP BJT PNP 120V 16A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
| 235 |
2N6030 |
Silicon PNP Power Transistors TO-3 package |
Savantic |
| 236 |
2N930 |
0.500W General Purpose NPN Metal Can Transistor. 45V Vceo, 0.030A Ic, - 600 hFE. |
Continental Device India Limited |
| 237 |
2N930 |
Chip Type 2C2484 Geometry 0307 Polarity NPN |
Semicoa Semiconductor |
| 238 |
2N930A |
0.500W General Purpose NPN Metal Can Transistor. 45V Vceo, 0.030A Ic, 100 - 600 hFE. |
Continental Device India Limited |
| 239 |
2SA1030 |
Silicon PNP Epitaxial |
Hitachi Semiconductor |
| 240 |
2SA1030 |
Silicon PNP Transistor |
Hitachi Semiconductor |
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