| No. |
Part Name |
Description |
Manufacturer |
| 211 |
NTE5080A |
Zener diode, 1 watt, +-5% tolerance. Nominal zener voltage Vz = 22V. Zener test current Izt = 11.5mA. |
NTE Electronics |
| 212 |
NX25F080A-3T-R |
3 V, 8M-bit flash memory with 4-pin SPI interface |
NexFlash |
| 213 |
NX25F080A-3TE-R |
3 V, 8M-bit flash memory with 4-pin SPI interface |
NexFlash |
| 214 |
NX25F080A-3TI-R |
3 V, 8M-bit flash memory with 4-pin SPI interface |
NexFlash |
| 215 |
NX25F080A-5T-R |
5 V, 8M-bit flash memory with 4-pin SPI interface |
NexFlash |
| 216 |
NX25F080A-5TE-R |
5 V, 8M-bit flash memory with 4-pin SPI interface |
NexFlash |
| 217 |
NX25F080A-5TI-R |
5 V, 8M-bit flash memory with 4-pin SPI interface |
NexFlash |
| 218 |
NX25M080A-3T-R |
3 V, 1 M flash module |
NexFlash |
| 219 |
NX25M080A-3T2-R |
3 V, 2 M flash module |
NexFlash |
| 220 |
NX25M080A-5T-R |
5 V, 1 M flash module |
NexFlash |
| 221 |
NX25M080A-5T2-R |
5 V, 2 M flash module |
NexFlash |
| 222 |
NX26F080A-3T-R |
3 V, 8M-bit flash memory with 2-pin NXS interface |
NexFlash |
| 223 |
NX26F080A-3TE-R |
3 V, 8M-bit flash memory with 2-pin NXS interface |
NexFlash |
| 224 |
NX26F080A-3TI-R |
3 V, 8M-bit flash memory with 2-pin NXS interface |
NexFlash |
| 225 |
NX26F080A-5T-R |
5 V, 8M-bit flash memory with 2-pin NXS interface |
NexFlash |
| 226 |
NX26F080A-5TE-R |
5 V, 8M-bit flash memory with 2-pin NXS interface |
NexFlash |
| 227 |
NX26F080A-5TI-R |
5 V, 8M-bit flash memory with 2-pin NXS interface |
NexFlash |
| 228 |
NX26M080A-3T-R |
3 V, 1 M flash module |
NexFlash |
| 229 |
NX26M080A-3T2-R |
3 V, 2 M flash module |
NexFlash |
| 230 |
NX26M080A-5T-R |
5 V, 1 M flash module |
NexFlash |
| 231 |
NX26M080A-5T2-R |
5 V, 2 M flash module |
NexFlash |
| 232 |
P8080A |
8 Bit Microprocessor |
Advanced Micro Devices |
| 233 |
SD1700C24K |
2400V 2080A Std. Recovery Diode in a DO-200AC (K-Puk)package |
International Rectifier |
| 234 |
SD1700C30K |
3000V 2080A Std. Recovery Diode in a DO-200AC (K-Puk)package |
International Rectifier |
| 235 |
SD1700C36K |
3600V 2080A Std. Recovery Diode in a DO-200AC (K-Puk)package |
International Rectifier |
| 236 |
SR1080A |
Schottky barrier rectifier. Common anode. Max repetitive peak reverse voltage 80 V. Max average forward rectified current 10.0 A. |
Chenyi Electronics |
| 237 |
SRF1080A |
Schottky barrier rectifier. Common anode. Max repetitive peak reverse voltage 80 V. Max average forward rectified current 10.0 A. |
Chenyi Electronics |
| 238 |
SST49LF080A |
Memory |
Microchip |
| 239 |
SST49LF080A-33-4C-NH |
33MHz; V(ds): 3.0 to 3.6V; 1W; 2.7 to 3.6V; 8Mbit LPC flash |
Silicon Storage Technology |
| 240 |
SST49LF080A-33-4C-NHE |
Memory |
Microchip |
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