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Datasheets found :: 231
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No. Part Name Description Manufacturer
211 RCA8766 10A N-P-N monolithic darlington power transistor. 350V, 150W. General Electric Solid State
212 RCA8766A 10A N-P-N monolithic darlington power transistor. 350V, 150W. General Electric Solid State
213 RCA8766B 10A N-P-N monolithic darlington power transistor. 400V, 150W. General Electric Solid State
214 RCA8766C 10A N-P-N monolithic darlington power transistor. 400V, 150W. General Electric Solid State
215 RCA8766D 10A N-P-N monolithic darlington power transistor. 450V, 150W. General Electric Solid State
216 RCA8766E 10A N-P-N monolithic darlington power transistor. 450V, 150W. General Electric Solid State
217 RCA9116C Silicon P-N-P epitaxial-base high-power transistor. -140V, 200W. General Electric Solid State
218 RCA9116D Silicon P-N-P epitaxial-base high-power transistor. -120V, 200W. General Electric Solid State
219 RCA9116E Silicon P-N-P epitaxial-base high-power transistor. -100V, 200W. General Electric Solid State
220 RCA9203A 4A N-P-N darlington power transistor. 250V, 50W. General Electric Solid State
221 RCA9203B 4A N-P-N darlington power transistor. 300V, 50W. General Electric Solid State
222 RCA9228A 50A high current medium voltage N-P-N silicon darlington power transistor. 60V, 300W. General Electric Solid State
223 RCA9228B 50A high current medium voltage N-P-N silicon darlington power transistor. 80V, 300W. General Electric Solid State
224 RCA9228C 50A high current medium voltage N-P-N silicon darlington power transistor. 100V, 300W. General Electric Solid State
225 RCA9228D 50A high current medium voltage N-P-N silicon darlington power transistor. 120V, 300W. General Electric Solid State
226 RCA9229A 50A high current medium voltage P-N-P silicon darlington power transistor. 60V, 300W. General Electric Solid State
227 RCA9229B 50A high current medium voltage P-N-P silicon darlington power transistor. 80V, 300W. General Electric Solid State
228 RCA9229C 50A high current medium voltage P-N-P silicon darlington power transistor. 100V, 300W. General Electric Solid State
229 RCA9229D 50A high current medium voltage P-N-P silicon darlington power transistor. 120V, 300W. General Electric Solid State
230 TIP2955 PNP silicon power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 7Vdc, Ic = 15Adc, PD = 90W. USHA India LTD
231 TIP3055 NPN, silicon power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 7Vcd, Ic = 15Adc, PD = 90W. USHA India LTD


Datasheets found :: 231
Page: | 4 | 5 | 6 | 7 | 8 |



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