No. |
Part Name |
Description |
Manufacturer |
211 |
AT22LV10-25JI |
Low-Voltage UV Erasable Programmable Logic Device |
Atmel |
212 |
AT22LV10-25PC |
Low-Voltage UV Erasable Programmable Logic Device |
Atmel |
213 |
AT22LV10-25PI |
Low-Voltage UV Erasable Programmable Logic Device |
Atmel |
214 |
AT22LV10-25SC |
Low-Voltage UV Erasable Programmable Logic Device |
Atmel |
215 |
AT22LV10-25SI |
Low-Voltage UV Erasable Programmable Logic Device |
Atmel |
216 |
AT22V10-20DM_883 |
t(pd): 20ns; t(s): 12ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
217 |
AT22V10-20GM_883 |
t(pd): 20ns; t(s): 12ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
218 |
AT22V10-20LM_883 |
t(pd): 20ns; t(s): 12ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
219 |
AT22V10-20NM_883 |
t(pd): 20ns; t(s): 12ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
220 |
AT22V10-25DM_883 |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
221 |
AT22V10-25GM_883 |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
222 |
AT22V10-25LM_833 |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
223 |
AT22V10-25NM_833 |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
224 |
AT28C010-20 |
1 Megabit 128K x 8 Paged CMOS E2PROM |
Atmel |
225 |
AT28C010-20DM/883 |
1 Megabit 128K x 8 Paged CMOS E2PROM |
Atmel |
226 |
AT28C010-20EM/883 |
1 Megabit 128K x 8 Paged CMOS E2PROM |
Atmel |
227 |
AT28C010-20FM/883 |
1 Megabit 128K x 8 Paged CMOS E2PROM |
Atmel |
228 |
AT28C010-20JC |
1 Megabit 128K x 8 Paged CMOS E2PROM |
Atmel |
229 |
AT28C010-20JI |
1 Megabit 128K x 8 Paged CMOS E2PROM |
Atmel |
230 |
AT28C010-20LM/883 |
1 Megabit 128K x 8 Paged CMOS E2PROM |
Atmel |
231 |
AT28C010-20PC |
1 Megabit 128K x 8 Paged CMOS E2PROM |
Atmel |
232 |
AT28C010-20PI |
1 Megabit 128K x 8 Paged CMOS E2PROM |
Atmel |
233 |
AT28C010-20TC |
1 Megabit 128K x 8 Paged CMOS E2PROM |
Atmel |
234 |
AT28C010-20TI |
1 Megabit 128K x 8 Paged CMOS E2PROM |
Atmel |
235 |
AT28C010-20UM/883 |
1 Megabit 128K x 8 Paged CMOS E2PROM |
Atmel |
236 |
AT28C010-25 |
1 Megabit 128K x 8 Paged CMOS E2PROM |
Atmel |
237 |
AT28C010-25DM/883 |
1 Megabit 128K x 8 Paged CMOS E2PROM |
Atmel |
238 |
AT28C010-25EM/883 |
1 Megabit 128K x 8 Paged CMOS E2PROM |
Atmel |
239 |
AT28C010-25FM/883 |
1 Megabit 128K x 8 Paged CMOS E2PROM |
Atmel |
240 |
AT28C010-25LM/883 |
1 Megabit 128K x 8 Paged CMOS E2PROM |
Atmel |
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