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Datasheets for 12K

Datasheets found :: 21322
Page: | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 |
No. Part Name Description Manufacturer
211 33C408RPFS25 4-megabit (512K x 8-bit) CMOS SRAM Maxwell Technologies
212 33C408RPFS30 4-megabit (512K x 8-bit) CMOS SRAM Maxwell Technologies
213 33C408RTFB20 4-megabit (512K x 8-bit) CMOS SRAM Maxwell Technologies
214 33C408RTFB25 4-megabit (512K x 8-bit) CMOS SRAM Maxwell Technologies
215 33C408RTFB30 4-megabit (512K x 8-bit) CMOS SRAM Maxwell Technologies
216 33C408RTFE20 4-megabit (512K x 8-bit) CMOS SRAM Maxwell Technologies
217 33C408RTFE25 4-megabit (512K x 8-bit) CMOS SRAM Maxwell Technologies
218 33C408RTFE30 4-megabit (512K x 8-bit) CMOS SRAM Maxwell Technologies
219 33C408RTFI20 4-megabit (512K x 8-bit) CMOS SRAM Maxwell Technologies
220 33C408RTFI25 4-megabit (512K x 8-bit) CMOS SRAM Maxwell Technologies
221 33C408RTFI30 4-megabit (512K x 8-bit) CMOS SRAM Maxwell Technologies
222 33C408RTFS20 4-megabit (512K x 8-bit) CMOS SRAM Maxwell Technologies
223 33C408RTFS25 4-megabit (512K x 8-bit) CMOS SRAM Maxwell Technologies
224 33C408RTFS30 4-megabit (512K x 8-bit) CMOS SRAM Maxwell Technologies
225 3DS16-325 512K x 32 Bit High-Speed CMOS Static RAM-5.0V Operating 3D PLUS
226 3DS16-325SC-15 512K x 32 Bit High-Speed CMOS Static RAM-5.0V Operating 3D PLUS
227 3DS16-325SC-20 512K x 32 Bit High-Speed CMOS Static RAM-5.0V Operating 3D PLUS
228 3DS16-325SI-15 512K x 32 Bit High-Speed CMOS Static RAM-5.0V Operating 3D PLUS
229 3DS16-325SI-20 512K x 32 Bit High-Speed CMOS Static RAM-5.0V Operating 3D PLUS
230 42S32200 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM Integrated Silicon Solution Inc
231 50S116T 512K x 2 Banks x 16 BITS SDRAM Ceramate
232 50S116T-5 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA Ceramate
233 50S116T-6 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA Ceramate
234 50S116T-7 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA Ceramate
235 5962-0151101QXC 512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class Q. Total dose none Aeroflex Circuit Technology
236 5962-0151101TXC 512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose none Aeroflex Circuit Technology
237 5962-0153301QXC 512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose none. Aeroflex Circuit Technology
238 5962-0153301TXC 512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose none Aeroflex Circuit Technology
239 5962-9960601QUA 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish hot solder dipped. Total dose none. Aeroflex Circuit Technology
240 5962-9960601QUC 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish gold. Total dose none. Aeroflex Circuit Technology


Datasheets found :: 21322
Page: | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 |



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