DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for 12K

Datasheets found :: 21333
Page: | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 |
No. Part Name Description Manufacturer
211 33C408RPFS20 4-megabit (512K x 8-bit) CMOS SRAM Maxwell Technologies
212 33C408RPFS25 4-megabit (512K x 8-bit) CMOS SRAM Maxwell Technologies
213 33C408RPFS30 4-megabit (512K x 8-bit) CMOS SRAM Maxwell Technologies
214 33C408RTFB20 4-megabit (512K x 8-bit) CMOS SRAM Maxwell Technologies
215 33C408RTFB25 4-megabit (512K x 8-bit) CMOS SRAM Maxwell Technologies
216 33C408RTFB30 4-megabit (512K x 8-bit) CMOS SRAM Maxwell Technologies
217 33C408RTFE20 4-megabit (512K x 8-bit) CMOS SRAM Maxwell Technologies
218 33C408RTFE25 4-megabit (512K x 8-bit) CMOS SRAM Maxwell Technologies
219 33C408RTFE30 4-megabit (512K x 8-bit) CMOS SRAM Maxwell Technologies
220 33C408RTFI20 4-megabit (512K x 8-bit) CMOS SRAM Maxwell Technologies
221 33C408RTFI25 4-megabit (512K x 8-bit) CMOS SRAM Maxwell Technologies
222 33C408RTFI30 4-megabit (512K x 8-bit) CMOS SRAM Maxwell Technologies
223 33C408RTFS20 4-megabit (512K x 8-bit) CMOS SRAM Maxwell Technologies
224 33C408RTFS25 4-megabit (512K x 8-bit) CMOS SRAM Maxwell Technologies
225 33C408RTFS30 4-megabit (512K x 8-bit) CMOS SRAM Maxwell Technologies
226 3DS16-325 512K x 32 Bit High-Speed CMOS Static RAM-5.0V Operating 3D PLUS
227 3DS16-325SC-15 512K x 32 Bit High-Speed CMOS Static RAM-5.0V Operating 3D PLUS
228 3DS16-325SC-20 512K x 32 Bit High-Speed CMOS Static RAM-5.0V Operating 3D PLUS
229 3DS16-325SI-15 512K x 32 Bit High-Speed CMOS Static RAM-5.0V Operating 3D PLUS
230 3DS16-325SI-20 512K x 32 Bit High-Speed CMOS Static RAM-5.0V Operating 3D PLUS
231 42S32200 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM Integrated Silicon Solution Inc
232 50S116T 512K x 2 Banks x 16 BITS SDRAM Ceramate
233 50S116T-5 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA Ceramate
234 50S116T-6 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA Ceramate
235 50S116T-7 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA Ceramate
236 5962-0151101QXC 512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class Q. Total dose none Aeroflex Circuit Technology
237 5962-0151101TXC 512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose none Aeroflex Circuit Technology
238 5962-0153301QXC 512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose none. Aeroflex Circuit Technology
239 5962-0153301TXC 512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose none Aeroflex Circuit Technology
240 5962-9960601QUA 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish hot solder dipped. Total dose none. Aeroflex Circuit Technology


Datasheets found :: 21333
Page: | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 |



© 2024 - www Datasheet Catalog com