| No. |
Part Name |
Description |
Manufacturer |
| 211 |
29C021PC-1 |
High speed 150 ns CMOS 2 Megabit programmable and erasable ROM 256K x 8 BIT flash PEROM |
Turbo IC |
| 212 |
29C021PC-1 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 150 ns. |
Turbo IC |
| 213 |
29C021PI-1 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 150 ns. |
Turbo IC |
| 214 |
29C021PI-1 |
High speed 150 ns CMOS 2 Megabit programmable and erasable ROM 256K x 8 BIT flash PEROM |
Turbo IC |
| 215 |
29C021PM-1 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 150 ns. |
Turbo IC |
| 216 |
29C021PM-1 |
High speed 150 ns CMOS 2 Megabit programmable and erasable ROM 256K x 8 BIT flash PEROM |
Turbo IC |
| 217 |
29C021TC-1 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 150 ns. |
Turbo IC |
| 218 |
29C021TC-1 |
High speed 150 ns CMOS 2 Megabit programmable and erasable ROM 256K x 8 BIT flash PEROM |
Turbo IC |
| 219 |
29C021TI-1 |
High speed 150 ns CMOS 2 Megabit programmable and erasable ROM 256K x 8 BIT flash PEROM |
Turbo IC |
| 220 |
29C021TI-1 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 150 ns. |
Turbo IC |
| 221 |
29C021TM-1 |
High speed 150 ns CMOS 2 Megabit programmable and erasable ROM 256K x 8 BIT flash PEROM |
Turbo IC |
| 222 |
29C021TM-1 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 150 ns. |
Turbo IC |
| 223 |
2EZ150 |
150 V, 2 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 224 |
2EZ150 |
150 V, 0.5 A, 2 W, glass passivated junction silicon zener diode |
TRSYS |
| 225 |
2N2906A |
hfe min 40 Transistor polarity PNP Current Ic continuous max 0.6 A Voltage Vce sat max 0.4 V Voltage Vceo 60 V Current Ic @ Vce sat 150 mA Time fall @ Ic 50 ns Current Ic (hfe) 500 mA |
SGS Thomson Microelectronics |
| 226 |
2N3298 |
NPN silicon transistor for power oscillator applications to 150 MHz |
Motorola |
| 227 |
2N3478 |
0.200W General Purpose NPN Metal Can Transistor. 15V Vceo, 0.050A Ic, 25 - 150 hFE. |
Continental Device India Limited |
| 228 |
2N3705 |
0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.600A Ic, 50 - 150 hFE |
Continental Device India Limited |
| 229 |
2N3713 |
80 V, 10 A, 150 W, NPN silicon power transistor |
Texas Instruments |
| 230 |
2N3714 |
100 V, 10 A, 150 W, NPN silicon power transistor |
Texas Instruments |
| 231 |
2N3715 |
10 AMPERE POWER TRANSISTORS SILICON NPN 60.80 VOLTS 150 WATTS |
Motorola |
| 232 |
2N3715 |
80 V, 10 A, 150 W, NPN silicon power transistor |
Texas Instruments |
| 233 |
2N3716 |
10 AMPERE POWER TRANSISTORS SILICON NPN 60.80 VOLTS 150 WATTS |
Motorola |
| 234 |
2N3716 |
100 V, 10 A, 150 W, NPN silicon power transistor |
Texas Instruments |
| 235 |
2N3724 |
1.000W Switching NPN Metal Can Transistor. 30V Vceo, 1.000A Ic, 60 - 150 hFE. |
Continental Device India Limited |
| 236 |
2N3725 |
1.000W Switching NPN Metal Can Transistor. 50V Vceo, 1.000A Ic, 60 - 150 hFE. |
Continental Device India Limited |
| 237 |
2N3771 |
50 V, 30 A, 150 W, NPN silicon power transistor |
Texas Instruments |
| 238 |
2N3772 |
100 V, 30 A, 150 W, NPN silicon power transistor |
Texas Instruments |
| 239 |
2N3791 |
-60 V, -10 A, 150 W, PNP silicon power transistor |
Texas Instruments |
| 240 |
2N3818 |
NPN silicon transistor for high-frequency power applications to 150 MHz |
Motorola |
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