No. |
Part Name |
Description |
Manufacturer |
211 |
CRSH16-100FP |
8&16 Amp Schottky Rectifiers |
Central Semiconductor |
212 |
CSHDD16-100A |
SURFACE MOUNT SILICON SCHOTTKY RECTIFIERS DUAL, COMMON ANODE 16 AMP, 40 THRU 100 VOLTS |
Central Semiconductor |
213 |
CSHDD16-100C |
SILICON SCHOTTKY RECTIFIERS DUAL, COMMON CATHODE 16 AMP, 40 THRU 100 VOLTS |
Central Semiconductor |
214 |
CSPPT16-101F |
CHIP SCALE PARALLEL TERMINATION ARRAY |
California Micro Devices Corp |
215 |
CSPPT16-101J |
CHIP SCALE PARALLEL TERMINATION ARRAY |
California Micro Devices Corp |
216 |
CW252016-10NK |
CW252016 Series - High Q Chip Inductors |
BOURNS |
217 |
DS1816-10 |
3.3V EconoReset with Open Drain Output |
Dallas Semiconductor |
218 |
DS1816-10 |
3.3V EconoReset with Open Drain Output |
MAXIM - Dallas Semiconductor |
219 |
DS1816-10+ |
3.3V EconoReset with Open Drain Output |
MAXIM - Dallas Semiconductor |
220 |
DS1816-10+T |
3.3V EconoReset with Open Drain Output |
MAXIM - Dallas Semiconductor |
221 |
DS2016-100 |
2k x 8 3V/5V Operation Static RAM |
MAXIM - Dallas Semiconductor |
222 |
DS2016-100+ |
2k x 8 3V/5V Operation Static RAM |
MAXIM - Dallas Semiconductor |
223 |
ESM216-1000 |
Thyristors - normal series |
SESCOSEM |
224 |
FS1416-105K |
FERRITE SHIELDED INDUCTORS |
etc |
225 |
GLT40516-10E |
32k x 16 embedded EDO DRAM |
G-LINK Technology |
226 |
GLT41016-10E |
64k x 16 embedded EDO DRAM |
G-LINK Technology |
227 |
GLT5160L16-10FJ |
16M (2-Bank x 524288-Word x 16-Bit) Synchronous DRAM |
etc |
228 |
GLT5160L16-10TC |
16M (2-Bank x 524288-Word x 16-Bit) Synchronous DRAM |
etc |
229 |
GLT5160L16-10TC |
100 MHz; 16M (2-bank x 524288-word x 16 bit) synchronous DRAM |
G-LINK Technology |
230 |
GLT5640AL16-10TC |
4M X 16 CMOS Synchronous Dynamic RAM |
etc |
231 |
IC61C3216-10K |
10ns; 3.3V; 32K x 16 high-speed CMOS static RAM |
ICSI |
232 |
IC61C3216-10T |
10ns; 3.3V; 32K x 16 high-speed CMOS static RAM |
ICSI |
233 |
IC61C6416-10K |
12ns; 5V; 64K x 16 high-speed CMOS static RAM |
ICSI |
234 |
IC61C6416-10K |
64K X 16 HIGH-SPEED CMOS STATIC RAM |
Integrated Circuit Solution Inc |
235 |
IC61C6416-10T |
10ns; 5V; 64K x 16 high-speed CMOS static RAM |
ICSI |
236 |
IC61C6416-10T |
64K X 16 HIGH-SPEED CMOS STATIC RAM |
Integrated Circuit Solution Inc |
237 |
IC61C6416-10TI |
10ns; 5V; 64K x 16 high-speed CMOS static RAM |
ICSI |
238 |
IC61LV12816-10B |
10ns; 3.3V; 128K x 16 high-speed CMOS static RAM |
ICSI |
239 |
IC61LV12816-10B |
128K x 16 Hight Speed SRAM with 3.3V |
Integrated Circuit Solution Inc |
240 |
IC61LV12816-10BI |
10ns; 3.3V; 128K x 16 high-speed CMOS static RAM |
ICSI |
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