| No. |
Part Name |
Description |
Manufacturer |
| 211 |
CAY16-103J8LF |
CAT/CAY 16 Series-Chip Resistor Arrays |
BOURNS |
| 212 |
CR16-100 |
Leaded Rectifier General Purpose |
Central Semiconductor |
| 213 |
CRSH16-100FP |
8&16 Amp Schottky Rectifiers |
Central Semiconductor |
| 214 |
CSHDD16-100A |
SURFACE MOUNT SILICON SCHOTTKY RECTIFIERS DUAL, COMMON ANODE 16 AMP, 40 THRU 100 VOLTS |
Central Semiconductor |
| 215 |
CSHDD16-100C |
SILICON SCHOTTKY RECTIFIERS DUAL, COMMON CATHODE 16 AMP, 40 THRU 100 VOLTS |
Central Semiconductor |
| 216 |
CSPPT16-101F |
CHIP SCALE PARALLEL TERMINATION ARRAY |
California Micro Devices Corp |
| 217 |
CSPPT16-101J |
CHIP SCALE PARALLEL TERMINATION ARRAY |
California Micro Devices Corp |
| 218 |
CW252016-10NK |
CW252016 Series - High Q Chip Inductors |
BOURNS |
| 219 |
DS1816-10 |
3.3V EconoReset with Open Drain Output |
Dallas Semiconductor |
| 220 |
DS1816-10 |
3.3V EconoReset with Open Drain Output |
MAXIM - Dallas Semiconductor |
| 221 |
DS1816-10+ |
3.3V EconoReset with Open Drain Output |
MAXIM - Dallas Semiconductor |
| 222 |
DS1816-10+T |
3.3V EconoReset with Open Drain Output |
MAXIM - Dallas Semiconductor |
| 223 |
DS2016-100 |
2k x 8 3V/5V Operation Static RAM |
MAXIM - Dallas Semiconductor |
| 224 |
DS2016-100+ |
2k x 8 3V/5V Operation Static RAM |
MAXIM - Dallas Semiconductor |
| 225 |
ESM216-1000 |
Thyristors - normal series |
SESCOSEM |
| 226 |
FS1416-105K |
FERRITE SHIELDED INDUCTORS |
etc |
| 227 |
GLT40516-10E |
32k x 16 embedded EDO DRAM |
G-LINK Technology |
| 228 |
GLT41016-10E |
64k x 16 embedded EDO DRAM |
G-LINK Technology |
| 229 |
GLT5160L16-10FJ |
16M (2-Bank x 524288-Word x 16-Bit) Synchronous DRAM |
etc |
| 230 |
GLT5160L16-10TC |
16M (2-Bank x 524288-Word x 16-Bit) Synchronous DRAM |
etc |
| 231 |
GLT5160L16-10TC |
100 MHz; 16M (2-bank x 524288-word x 16 bit) synchronous DRAM |
G-LINK Technology |
| 232 |
GLT5640AL16-10TC |
4M X 16 CMOS Synchronous Dynamic RAM |
etc |
| 233 |
IC61C3216-10K |
10ns; 3.3V; 32K x 16 high-speed CMOS static RAM |
ICSI |
| 234 |
IC61C3216-10T |
10ns; 3.3V; 32K x 16 high-speed CMOS static RAM |
ICSI |
| 235 |
IC61C6416-10K |
12ns; 5V; 64K x 16 high-speed CMOS static RAM |
ICSI |
| 236 |
IC61C6416-10K |
64K X 16 HIGH-SPEED CMOS STATIC RAM |
Integrated Circuit Solution Inc |
| 237 |
IC61C6416-10T |
10ns; 5V; 64K x 16 high-speed CMOS static RAM |
ICSI |
| 238 |
IC61C6416-10T |
64K X 16 HIGH-SPEED CMOS STATIC RAM |
Integrated Circuit Solution Inc |
| 239 |
IC61C6416-10TI |
10ns; 5V; 64K x 16 high-speed CMOS static RAM |
ICSI |
| 240 |
IC61LV12816-10B |
10ns; 3.3V; 128K x 16 high-speed CMOS static RAM |
ICSI |
| | | |
