| No. |
Part Name |
Description |
Manufacturer |
| 211 |
MAX11160EVKIT |
Evaluation Kit for the MAX11150/MAX11152/MAX11158/MAX11160/MAX11161 /MAX11162 /MAX11163 /MAX11168 /MAX11169 |
MAXIM - Dallas Semiconductor |
| 212 |
MAX11160EVKIT# |
Evaluation Kit for the MAX11150/MAX11152/MAX11158/MAX11160/MAX11161 /MAX11162 /MAX11163 /MAX11168 /MAX11169 |
MAXIM - Dallas Semiconductor |
| 213 |
MAX11162EVKIT |
Evaluation Kit for the MAX11150/MAX11152/MAX11158/MAX11160/MAX11161 /MAX11162 /MAX11163 /MAX11168 /MAX11169 |
MAXIM - Dallas Semiconductor |
| 214 |
MAX11162EVKIT# |
Evaluation Kit for the MAX11150/MAX11152/MAX11158/MAX11160/MAX11161 /MAX11162 /MAX11163 /MAX11168 /MAX11169 |
MAXIM - Dallas Semiconductor |
| 215 |
MAX11168EVKIT |
Evaluation Kit for the MAX11150/MAX11152/MAX11158/MAX11160/MAX11161 /MAX11162 /MAX11163 /MAX11168 /MAX11169 |
MAXIM - Dallas Semiconductor |
| 216 |
MAX11168EVKIT# |
Evaluation Kit for the MAX11150/MAX11152/MAX11158/MAX11160/MAX11161 /MAX11162 /MAX11163 /MAX11168 /MAX11169 |
MAXIM - Dallas Semiconductor |
| 217 |
MB40C338 |
3 ch 8-bit 162 MSPS A/D Converter |
Fujitsu Microelectronics |
| 218 |
MB40C338PFV |
3 ch 8-bit 162 MSPS A/D Converter |
Fujitsu Microelectronics |
| 219 |
MB40C338V |
3 ch 8-bit 162 MSPS A/D Converter |
Fujitsu Microelectronics |
| 220 |
MB40C338VPFV |
3 ch 8-bit 162 MSPS A/D Converter |
Fujitsu Microelectronics |
| 221 |
NX8560SJ401-BC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1540.162 nm. Frequency 194.65 THz. FC-UPC connector. |
NEC |
| 222 |
NX8560SJ401-CC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1540.162 nm. Frequency 194.65 THz. SC-UPC connector. |
NEC |
| 223 |
NX8567SA401-CC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1540.162 nm. Frequency 194.65 THz. SC-UPC connector. |
NEC |
| 224 |
NX8567SAM401-BC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 360 km DWDM applications. ITU-T wavelength 1540.162 nm. Frequency 194.65 THz. FC-UPC connector. |
NEC |
| 225 |
NX8567SAM401-CC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 360 km DWDM applications. ITU-T wavelength 1540.162 nm. Frequency 194.65 THz. SC-UPC connector. |
NEC |
| 226 |
NX8567SAS401-BC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1540.162 nm. Frequency 194.65 THz. FC-UPC connector. |
NEC |
| 227 |
NX8567SAS401-CC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1540.162 nm. Frequency 194.65 THz. SC-UPC connector. |
NEC |
| 228 |
NX8570SC401-BA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (20 mW min). ITU-T wavelength 1540.162 nm. Frequency 194.65 THz. FC-PC connector. |
NEC |
| 229 |
NX8570SC401-CA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (20 mW min). ITU-T wavelength 1540.162 nm. Frequency 194.65 THz. SC-PC connector. |
NEC |
| 230 |
NX8571SC401-BA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (10 mW min). ITU-T wavelength 1540.162 nm. Frequency 194.65 THz. FC-PC connector. |
NEC |
| 231 |
NX8571SC401-CA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (10 mW min). ITU-T wavelength 1540.162 nm. Frequency 194.65 THz. SC-PC connector. |
NEC |
| 232 |
P4KE170A |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 162 V, Vbr(max) = 179 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 233 |
P4KE170CA |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 162 V, Vbr(max) = 179 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 234 |
P4KE180C |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 162 V, Vbr(max) = 198 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 235 |
P6KE170CA |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 162 V, Vbr(max) = 179 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 236 |
P6KE180 |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 162 V, Vbr(max) = 198 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 237 |
P6KE180C |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 162 V, Vbr(max) = 198 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 238 |
STB23NM50N |
N-channel 500 V, 0.162 Ohm, 17 A, D2PAK MDmesh(TM) II Power MOSFET |
ST Microelectronics |
| 239 |
STF23NM50N |
N-channel 500 V, 0.162 Ohm, 17 A, TO-220FP MDmesh(TM) II Power MOSFET |
ST Microelectronics |
| 240 |
STP23NM50N |
N-channel 500 V, 0.162 Ohm, 17 A, TO-220 MDmesh(TM) II Power MOSFET |
ST Microelectronics |
| | | |
