| No. |
Part Name |
Description |
Manufacturer |
| 211 |
NTB18N06LT4G |
Power MOSFET 15 Amps, 60 Volts, Logic Level N-Channel, D2 Pak |
ON Semiconductor |
| 212 |
NTD18N06 |
Power MOSFET 18 Amps, 60 Volts N-Channel DPAK |
ON Semiconductor |
| 213 |
NTD18N06-001 |
Power MOSFET 18 Amps, 60 Volts N-Channel DPAK |
ON Semiconductor |
| 214 |
NTD18N06-D |
Power MOSFET 18 Amps, 60 Volts N-Channel DPAK |
ON Semiconductor |
| 215 |
NTD18N06L |
Power MOSFET 18 Amps, 60 Volts, Logic Level N-Channel DPAK |
ON Semiconductor |
| 216 |
NTD18N06L-001 |
Power MOSFET 18 Amps, 60 Volts, Logic Level N-Channel DPAK |
ON Semiconductor |
| 217 |
NTD18N06L-1G |
Power MOSFET 18 Amps, 60 Volts, Logic Level N-Channel DPAK |
ON Semiconductor |
| 218 |
NTD18N06L-D |
Power MOSFET 18 Amps, 60 Volts, Logic Level N-Channel DPAK |
ON Semiconductor |
| 219 |
NTD18N06LG |
Power MOSFET 18 Amps, 60 Volts, Logic Level N-Channel DPAK |
ON Semiconductor |
| 220 |
NTD18N06LT4 |
Power MOSFET 18 Amps, 60 Volts, Logic Level N-Channel DPAK |
ON Semiconductor |
| 221 |
NTD18N06LT4G |
Power MOSFET 18 Amps, 60 Volts, Logic Level N-Channel DPAK |
ON Semiconductor |
| 222 |
NTD18N06T4 |
Power MOSFET 18 Amps, 60 Volts N-Channel DPAK |
ON Semiconductor |
| 223 |
NTLJF3118N |
Power MOSFET and Schottky Diode 20 V, 4.6 A, µCool™ N-Channel, with 2.0 A Schottky Barrier Diode |
ON Semiconductor |
| 224 |
NTP18N06 |
Power MOSFET 15 A 60 V N-Channel TO-220 |
ON Semiconductor |
| 225 |
NTP18N06-D |
Power MOSFET 15 Amps, 60 Volts N-Channel TO-220 |
ON Semiconductor |
| 226 |
NTP18N06L |
Power MOSFET 15 Amps, 60 Volts, Logic Level (N−Channel TO−220 and DPAK) |
ON Semiconductor |
| 227 |
NTP18N06L-D |
Power MOSFET 15 Amps, 60 Volts, Logic Level N-Channel TO-220 and D2 PAK |
ON Semiconductor |
| 228 |
NTR4518N |
Power MOSFET 30V, 2.5A, Single N-Channel, SOT-23 |
ON Semiconductor |
| 229 |
NX8567SA465-BC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1546.518nm. Frequency 193.85 THz. FC-UPC connector. |
NEC |
| 230 |
NX8567SA509-BC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1550.918nm. Frequency 193.30 THz. FC-UPC connector. |
NEC |
| 231 |
PB-IRFR18N15D |
Leaded 150V Single N-Channel HEXFET Power MOSFET in a D-Pak package |
International Rectifier |
| 232 |
PB-IRFU18N15D |
Leaded 150V Single N-Channel HEXFET Power MOSFET in a I-Pak package |
International Rectifier |
| 233 |
PC81718NSZ |
PC8171NSZ PC8171NSZ |
SHARP |
| 234 |
PHB18NQ10T |
N-channel TrenchMOS standard level FET |
Nexperia |
| 235 |
PHB18NQ10T |
N-channel TrenchMOS standard level FET |
NXP Semiconductors |
| 236 |
PHB18NQ10T |
N-channel TrenchMOS(tm) transistor |
Philips |
| 237 |
PHB18NQ20T |
N-channel TrenchMOS(tm) transistor |
Philips |
| 238 |
PHD18NQ10T |
N-channel TrenchMOS(tm) transistor |
Philips |
| 239 |
PHK18NQ03LT |
N-channel TrenchMOS logic level FET |
Nexperia |
| 240 |
PHK18NQ03LT |
N-channel TrenchMOS logic level FET |
NXP Semiconductors |
| | | |
