No. |
Part Name |
Description |
Manufacturer |
211 |
PD57006-E |
6W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package |
ST Microelectronics |
212 |
PD57006S-E |
6W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package |
ST Microelectronics |
213 |
PD57006STR-E |
6W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package |
ST Microelectronics |
214 |
PD57006TR-E |
6W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package |
ST Microelectronics |
215 |
PD57018-E |
18W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package |
ST Microelectronics |
216 |
PD57018S-E |
18W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package |
ST Microelectronics |
217 |
PD57018STR-E |
18W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package |
ST Microelectronics |
218 |
PD57018TR-E |
18W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package |
ST Microelectronics |
219 |
PD57030-E |
30W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package |
ST Microelectronics |
220 |
PD57030S-E |
30W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package |
ST Microelectronics |
221 |
PD57045-E |
45W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package |
ST Microelectronics |
222 |
PD57045S-E |
45W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package |
ST Microelectronics |
223 |
PD57045TR-E |
45W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package |
ST Microelectronics |
224 |
PD57060-E |
60W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package |
ST Microelectronics |
225 |
PD57060S-E |
60W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package |
ST Microelectronics |
226 |
PD57060TR-E |
60W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package |
ST Microelectronics |
227 |
PD57070S-E |
70W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package |
ST Microelectronics |
228 |
PHA2731-190M |
Radar Pulsed Power Amplifier-190 Watts 2.7-3.1GHz,200ms Pulse,10% Duty |
Tyco Electronics |
229 |
Q62702-F1487 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network |
Siemens |
230 |
Q62702-F1498 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
231 |
Q62702-F1613 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network |
Siemens |
232 |
Q62702-F1627 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
233 |
Q62702-F1628 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) |
Siemens |
234 |
Q62702-F1645 |
NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA) |
Siemens |
235 |
Q62702-F1665 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
236 |
Q62702-F1773 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
237 |
Q62702-F1774 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
238 |
Q62702-F1775 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
239 |
Q62702-F1776 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
240 |
Q62702-F940 |
NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA) |
Siemens |
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