No. |
Part Name |
Description |
Manufacturer |
211 |
Q62702-F1628 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) |
Siemens |
212 |
Q62702-F1645 |
NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA) |
Siemens |
213 |
Q62702-F1665 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
214 |
Q62702-F1773 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
215 |
Q62702-F1774 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
216 |
Q62702-F1775 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
217 |
Q62702-F1776 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
218 |
Q62702-F940 |
NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA) |
Siemens |
219 |
RCA-41024 |
1W 1GHz Silicon NPN Overlay RF Transistor |
RCA Solid State |
220 |
RCA-41025 |
1GHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
221 |
RCA-41026 |
1GHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
222 |
RCA-41027 |
1GHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
223 |
RCA-41028 |
1GHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
224 |
RCL449AJFQML |
1.1GHz Ultra Wideband Monolithic Op Amp |
National Semiconductor |
225 |
RCL449AJFQML |
1.1GHz Ultra Wideband Monolithic Op Amp |
National Semiconductor |
226 |
RHF330 |
Rad-Hard 1GHz low noise CMOS Single Opamp |
ST Microelectronics |
227 |
RHF330K-01V |
Rad-Hard 1GHz low noise CMOS Single Opamp |
ST Microelectronics |
228 |
RHF330K1 |
Rad-Hard 1GHz low noise CMOS Single Opamp |
ST Microelectronics |
229 |
S1T8825 |
1.1GHZ DUAL PLL |
Samsung Electronic |
230 |
S1T8825X01-R0B0 |
1.1GHZ DUAL PLL |
Samsung Electronic |
231 |
SA601 |
Low voltage LNA and mixer - 1GHz |
Philips |
232 |
SA601DK |
Low voltage LNA and mixer - 1GHz |
Philips |
233 |
SA611 |
1GHz low voltage LNA and mixer |
Philips |
234 |
SA620 |
Low voltage LNA, mixer and VCO - 1GHz |
Philips |
235 |
SA620DK |
Low voltage LNA, mixer and VCO � 1GHz |
Philips |
236 |
SA621 |
1GHz - Low voltage LNA, mixer and VCO |
Philips |
237 |
SA621DH |
1GHz - Low voltage LNA, mixer and VCO |
Philips |
238 |
SA621DK |
1GHz - Low voltage LNA, mixer and VCO |
Philips |
239 |
SA631 |
1GHz low voltage LNA and mixer |
Philips |
240 |
SA631DK |
1GHz low voltage LNA and mixer |
Philips |
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