No. |
Part Name |
Description |
Manufacturer |
211 |
RB521S30T5 |
Schottky Barrier Diode |
ON Semiconductor |
212 |
RF1S30N06LE |
30A/ 60V/ ESD Rated/ Avalanche Rated/ Logic Level N-Channel Enhancement-Mode Power MOSFETs |
Fairchild Semiconductor |
213 |
RF1S30N06LESM |
30A/ 60V/ ESD Rated/ Avalanche Rated/ Logic Level N-Channel Enhancement-Mode Power MOSFETs |
Fairchild Semiconductor |
214 |
RF1S30N06LESM |
30A/ 60V/ ESD Rated/ 0.047 Ohm/ Logic Level N-Channel Power MOSFETs |
Intersil |
215 |
RF1S30P05SM |
30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs |
Fairchild Semiconductor |
216 |
RF1S30P05SM |
30A/ 50V/ 0.065 Ohm/ P-Channel Power MOSFETs |
Intersil |
217 |
RF1S30P06 |
30A/ 60V/ 0.065 Ohm/ P-Channel Power MOSFETs |
Intersil |
218 |
RF1S30P06SM |
30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs |
Fairchild Semiconductor |
219 |
RF1S30P06SM |
30A/ 60V/ 0.065 Ohm/ P-Channel Power MOSFETs |
Intersil |
220 |
RST1S31HF |
Up to 4 V, 3 A step-down 2.3 MHz switching regulator for aerospace applications |
ST Microelectronics |
221 |
ST1S30 |
3 A, 1.5 MHz PWM step-down switching regulator with synchronous rectification |
ST Microelectronics |
222 |
ST1S30IPUR |
3 A, 1.5 MHz PWM step-down switching regulator with synchronous rectification |
ST Microelectronics |
223 |
ST1S31 |
3 A DC step-down switching regulator |
ST Microelectronics |
224 |
ST1S31D-R |
3 A DC step-down switching regulator |
ST Microelectronics |
225 |
ST1S31PUR |
3 A DC step-down switching regulator |
ST Microelectronics |
226 |
ST1S32 |
4 A DC step-down switching regulator |
ST Microelectronics |
227 |
ST1S32PUR |
4 A DC step-down switching regulator |
ST Microelectronics |
228 |
STEVAL-ISA068V1 |
4 A / 1.5 MHz step-down synchronous switching regulator based on the ST1S32 in DFN 4x4 package |
ST Microelectronics |
229 |
STEVAL-ISA069V1 |
3 A / 1.5 MHz step-down synchronous switching regulator based on the ST1S31 in DFN 3x3 package |
ST Microelectronics |
230 |
STEVAL-ISA070V1 |
3 A / 1.5 MHz step-down synchronous switching regulator based on the ST1S31 in SO-8 package |
ST Microelectronics |
231 |
TC58BVG1S3HBAI4 |
BENAND (Built-in ECC SLCNAND) |
TOSHIBA |
232 |
TC58BVG1S3HBAI6 |
BENAND (Built-in ECC SLCNAND) |
TOSHIBA |
233 |
TC58BVG1S3HTA00 |
BENAND (Built-in ECC SLCNAND) |
TOSHIBA |
234 |
TC58BVG1S3HTAI0 |
BENAND (Built-in ECC SLCNAND) |
TOSHIBA |
235 |
TC58BYG1S3HBAI4 |
BENAND (Built-in ECC SLCNAND) |
TOSHIBA |
236 |
TC58BYG1S3HBAI6 |
BENAND (Built-in ECC SLCNAND) |
TOSHIBA |
237 |
TC58NVG1S3BFT00 |
(TC58NVG1S8BFT00) 2 GBit CMOS NAND EPROM |
TOSHIBA |
238 |
TC58NVG1S3HBAI4 |
SLC NAND |
TOSHIBA |
239 |
TC58NVG1S3HBAI6 |
SLC NAND |
TOSHIBA |
240 |
TC58NVG1S3HTA00 |
SLC NAND |
TOSHIBA |
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