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Datasheets for 2110

Datasheets found :: 344
Page: | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 |
No. Part Name Description Manufacturer
211 PTF210301E LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz Infineon
212 PTF210451 LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz Infineon
213 PTF210451E LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz Infineon
214 PTF210901 LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz Infineon
215 PTF210901E LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz Infineon
216 PTF211301 LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz Infineon
217 PTF211301A LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz Infineon
218 PTF211802 LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz Infineon
219 PTF211802A LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz Infineon
220 PTF211802E LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz Infineon
221 PTFB210801FA-V1 High Power RF LDMOS FET 80W, 28V, 2110 - 2170 MHz Wolfspeed
222 PTFB211503FL-V2 High Power RF LDMOS FET 150W, 2110 - 2170 MHz Wolfspeed
223 PTFB212503FL-V2 High Power RF LDMOS FET 240W, 2110 - 2170 MHz Wolfspeed
224 PTFB213004F-V2 High Power RF LDMOS FET 300W, 2110 - 2170 MHz Wolfspeed
225 PTFB213208FV-V2 High Power RF LDMOS FET 320W, 28V, 2110 - 2170 MHz Wolfspeed
226 PVX-2110 200V 50A PULSE GENERATOR Directed Energy
227 PVX-2110 200V 50A pulse generator IXYS
228 PXAC213308FV-V1 High Power RF LDMOS FET 320W, 28V, 2110 - 2200 MHz Wolfspeed
229 PXAD214218FV-V1 High Power RF LDMOS FET 430W, 28V, 2110 - 2170 MHz Wolfspeed
230 PXAE213708NB-V1 High Power RF LDMOS FET 400W, 28V, 2110 - 2200 MHz Wolfspeed
231 PXFE211507FC-V1 High Power RF LDMOS FET 170W, 28V, 2110 - 2170 MHz Wolfspeed
232 Q62702-C2110 PNP Silicon AF Transistors (For AF driver and output stages High collector current) Siemens
233 QPP-307 QuikPAC module data. 60W, 2110-2170 MHz, Class AB power stage. XEMOD
234 QPP-308 QuikPAC module data. 60W, 2110-2170 MHz, Class AB power stage. XEMOD
235 R21100 Standard Rectifier (trr more than 500ns) Microsemi
236 RN2110 Transistor Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications TOSHIBA
237 RN2110ACT Bias resistor built-in transistor (BRT) TOSHIBA
238 RN2110CT Bias resistor built-in transistor (BRT) TOSHIBA
239 RN2110F Transistor Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications TOSHIBA
240 RN2110FT Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. TOSHIBA


Datasheets found :: 344
Page: | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 |



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