| No. |
Part Name |
Description |
Manufacturer |
| 211 |
2N3553 |
Silicon NPN planar epitaxial transistor for transmitter applications at 175 MHz with 28 V supply voltage |
VALVO |
| 212 |
2N3632 |
Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 28 V supply voltage |
VALVO |
| 213 |
2N3866 |
Silicon NPN planar epitaxial transistor for driver stages in transmitters up to 400 MHz at 28 V supply voltage |
VALVO |
| 214 |
2N6198 |
12 W, 28 V, 100-200 MHz, VHF communication |
Acrian |
| 215 |
2N6199 |
25 W, 28 V, 100-200 MHz, VHF communication |
Acrian |
| 216 |
2N6200 |
B40-28 40 WATTS - 28 VOLTS 100-200 MHZ |
Acrian |
| 217 |
2N6200 |
B40-28 40 WATTS - 28 VOLTS 100-200 MHZ |
Acrian |
| 218 |
2SC3139 |
CLASS A, 860MHz 24V power transistor (This datasheet of NEL080120-28 is also the datasheet of 2SC3139, see the Electrical Characteristics table) |
NEC |
| 219 |
2SC3140 |
CLASS A, 860MHz 24V power transistor (This datasheet of NEL080220-28 is also the datasheet of 2SC3140, see the Electrical Characteristics table) |
NEC |
| 220 |
2SC3141 |
CLASS A, 860MHz 24V power transistor (This datasheet of NEL080525-28 is also the datasheet of 2SC3141, see the Electrical Characteristics table) |
NEC |
| 221 |
2SC3537 |
Class C, 900MHz 28V power transistor (This datasheet of NEM092081B-28 is also the datasheet of 2SC3537, see the Electrical Characteristics table) |
NEC |
| 222 |
2SC3538 |
Class C, 900MHz 28V power transistor (This datasheet of NEM094081B-28 is also the datasheet of 2SC3538, see the Electrical Characteristics table) |
NEC |
| 223 |
2SC3539 |
Class C, 900MHz 28V power transistor (This datasheet of NEM096081B-28 is also the datasheet of 2SC3539, see the Electrical Characteristics table) |
NEC |
| 224 |
2SC3660 |
Class AB/C UHF 28V push-pull transistor (This datasheet of NEM060C69-28 is also the datasheet of 2SC3660, see the Electrical Characteristics table) |
NEC |
| 225 |
2SC3660A |
Class AB/C UHF 28V push-pull transistor (This datasheet of NEM080C69-28 is also the datasheet of 2SC3660A, see the Electrical Characteristics table) |
NEC |
| 226 |
3001 |
1 W, 28 V, 3000 MHz common base transistor |
GHz Technology |
| 227 |
3001-2 |
1 W, 28 V, 3 GHz, microwave CW bipolar |
Acrian |
| 228 |
3003 |
3 W, 28 V, 3 GHz, microwave CW bipolar |
Acrian |
| 229 |
3003 |
3 W, 28 V, 3000 MHz common base transistor |
GHz Technology |
| 230 |
3003-2 |
3 W, 28 V, 3 GHz, microwave CW bipolar |
Acrian |
| 231 |
3003-3 |
3 W, 28 V, 3 GHz, microwave CW bipolar |
Acrian |
| 232 |
3005 |
5 W, 28 V, 3 GHz, microwave CW bipolar |
Acrian |
| 233 |
3005 |
5 W, 28 V, 3000 MHz common base transistor |
GHz Technology |
| 234 |
3005-2 |
5 W, 28 V, 3 GHz, microwave CW bipolar |
Acrian |
| 235 |
3005-3 |
5 W, 28 V, 3 GHz, microwave CW bipolar |
Acrian |
| 236 |
37LV128 |
Note:This product has become 'Obsolete' and is no longer offered as a viable device.37LV128 is a Serial OTP EPROM device organized internally in a x32 configuration with 131,072 bits and 4096x32 programming word. The 37LV128 is suitable fo |
Microchip |
| 237 |
37LV128 |
Note:This product has become 'Obsolete' and is no longer offered as a viable device.37LV128 is a Serial OTP EPROM device organized internally in a x32 configuration with 131,072 bits and 4096x32 programming word. The 37LV128 is suitable fo |
Microchip |
| 238 |
3DSD1280-323H |
1.28 GBit Synchronous DRAM - Hermetic package |
3D PLUS |
| 239 |
3DSD1280-883D-S |
1.28 GBit Synchronous DRAM - Hermetic package |
3D PLUS |
| 240 |
3DSD1280-PROTO |
1.28 GBit Synchronous DRAM - Hermetic package |
3D PLUS |
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