| No. |
Part Name |
Description |
Manufacturer |
| 211 |
2SC2853 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 212 |
2SC2853 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 213 |
2SC2854 |
Silicon NPN Transistor |
Hitachi Semiconductor |
| 214 |
2SC2854 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 215 |
2SC2855 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 216 |
2SC2855 |
Silicon NPN Transistor |
Hitachi Semiconductor |
| 217 |
2SC2856 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 218 |
2SC2856 |
Silicon NPN Transistor |
Hitachi Semiconductor |
| 219 |
2SC2856 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 220 |
2SC2857 |
NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications |
SANYO |
| 221 |
2SC2859 |
Transistor Silicon NPN Epitaxial (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
| 222 |
2SC3245 |
900mW Lead frame NPN transistor, maximum rating: 120V Vceo, 100mA Ic, 150 to 800 hFE. Complementary 2SA1285 |
Isahaya Electronics Corporation |
| 223 |
2SC3245A |
900mW Lead frame NPN transistor, maximum rating: 150V Vceo, 100mA Ic, 150 to 500 hFE. Complementary 2SA1285A |
Isahaya Electronics Corporation |
| 224 |
2SC3285 |
Silicon NPN Power Transistors TO-3PN package |
Savantic |
| 225 |
2SD2285 |
NPN Epitaxial Planar Silicon Transistors 30V/20A High-Current Switching Applications |
SANYO |
| 226 |
2SJ285 |
Ultrahigh-Speed Switching Applications |
SANYO |
| 227 |
2SK1285 |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
NEC |
| 228 |
2SK2850 |
N-Channel Enhancement Mode Power MOSFET |
Fuji Electric |
| 229 |
2SK2850-01 |
N-Channel Enhancement Mode Power MOSFET |
Fuji Electric |
| 230 |
2SK2851 |
Silicon N Channel MOS FET High Speed Power Switching |
Hitachi Semiconductor |
| 231 |
2SK2851 |
Transistors>Switching/MOSFETs |
Renesas |
| 232 |
2SK2854 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE UHF BAND AMPLIFIER APPLICATION |
TOSHIBA |
| 233 |
2SK2855 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE UHF BAND AMPLIFIER APPLICATION |
TOSHIBA |
| 234 |
2SK2856 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE (UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 235 |
2SK2857 |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
NEC |
| 236 |
2SK2858 |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
NEC |
| 237 |
2SK2859 |
N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications |
SANYO |
| 238 |
2SK3285 |
N-Channel Silicon MOSFET DC/DC Converter Applications |
SANYO |
| 239 |
3SK0285 |
Silicon N-Channel MOS FET |
Panasonic |
| 240 |
7305 |
T-1 3/4 subminiature, miniature flanged lamp. 4.5 volts, 0.285 amps. |
Gilway Technical Lamp |
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