| No. |
Part Name |
Description |
Manufacturer |
| 211 |
RYC002N05 |
0.9V Drive Nch MOSFET |
ROHM |
| 212 |
RYC002N05T316 |
0.9V Drive Nch MOSFET |
ROHM |
| 213 |
RYM002N05 |
0.9V Drive Nch MOSFET |
ROHM |
| 214 |
RYM002N05T2CL |
0.9V Drive Nch MOSFET |
ROHM |
| 215 |
RYU002N05 |
0.9V Drive Nch MOSFET |
ROHM |
| 216 |
RYU002N05T306 |
0.9V Drive Nch MOSFET |
ROHM |
| 217 |
SI9102N02-E3 |
3-W High-Voltage Switchmode Regulator |
Vishay |
| 218 |
SIPC42S2N08 |
Low Voltage MOSFETs - Chip; 227 A; 75V; NL; 4,2 mOhm; integrated Rg |
Infineon |
| 219 |
SPB42N03S2L-13 |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 12.6mOhm, 42A, LL |
Infineon |
| 220 |
SPD22N08S2L-50 |
Low Voltage MOSFETs - DPAK; 22 A; 75V; LL; 50 mOhm |
Infineon |
| 221 |
SPI42N03S2L-13 |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-262, RDSon = 12.9mOhm, 42A, LL |
Infineon |
| 222 |
SPP42N03S2L-13 |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 12.9mOhm, 42A, LL |
Infineon |
| 223 |
ST22N072 |
Smartcard 32-Bit RISC MCU with 72 Kbytes EEPROM Javacard" HW Execution & Cryptographic Library |
ST Microelectronics |
| 224 |
STD12N05 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 225 |
STD12N05 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 226 |
STD12N05 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 227 |
STD12N05L |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 228 |
STD12N05L |
N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 229 |
STD12N05L |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 230 |
STD12N06 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 231 |
STD12N06 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 232 |
STD12N06 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 233 |
STD12N06L |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 234 |
STD12N06L |
N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 235 |
STD12N06L |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 236 |
STK12N05L |
N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 237 |
STK12N06L |
N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 238 |
STK22N05 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 239 |
STK22N05 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
ST Microelectronics |
| 240 |
STK22N06 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
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