| No. |
Part Name |
Description |
Manufacturer |
| 211 |
MAX5925DEUB |
1 V to 13.2 V, n-channel hot-swap controller require no sense resistor |
MAXIM - Dallas Semiconductor |
| 212 |
MAX5926EEE |
1 V to 13.2 V, n-channel hot-swap controller require no sense resistor |
MAXIM - Dallas Semiconductor |
| 213 |
MGFK35V2732 |
12.7-13.2 GHz BAND 3W Internally Matched GaAs FET |
Mitsubishi Electric Corporation |
| 214 |
MGFK38V2732 |
12.7-13.2 GHz BAND 6W Internally Matched GaAs FET |
Mitsubishi Electric Corporation |
| 215 |
MRFIC0970 |
3.2 V GSM GaAs Integrated Power Amplifier |
Freescale (Motorola) |
| 216 |
MRFIC0970 |
MRFIC0970 Technical Data Sheet: 3.2 V GSM GaAs Integrated Power Amplifier |
Motorola |
| 217 |
MRFIC1870 |
3.2 V DCS/PCS GaAs Integrated Power Amplifier |
Freescale (Motorola) |
| 218 |
MRFIC1870 |
3.2 V DCS/PCS GaAs Integrated Power Amplifier |
Motorola |
| 219 |
MRFIC1870D |
3.2 V DCS/PCS GaAs Integrated Power Amplifier |
Motorola |
| 220 |
MRFIC1870PP |
MRFIC1870 Product Preview Data Sheet: 3.2 V DCS/PCS GaAs Integrated Power Amplifier |
Motorola |
| 221 |
MST4411CK |
High Efficiency Red 0.52 inch (13.2 mm) Three Digit Stick Display |
Fairchild Semiconductor |
| 222 |
MT8806 |
8 x 4 Analog Switch Array with Low On-resistance, for (VDD - VEE) = 4.5 V to 13.2 V |
Zarlink Semiconductor |
| 223 |
MT8808 |
8 x 8 Analog Switch Array with Low On-resistance, for (VDD - VEE) = 4.5 V to 13.2 V |
Zarlink Semiconductor |
| 224 |
MT8809 |
8 x 8 Analog Switch Array with Low On-resistance, for VDD = 4.5 V to 13.2 V, with Chip Select |
Zarlink Semiconductor |
| 225 |
MT8814 |
8 x 12 Analog Switch Array with Low On-resistance, for (VDD - VEE) =4.5 V to 13.2 V, with Chip Select |
Zarlink Semiconductor |
| 226 |
MT8815 |
8 x 12 Analog Switch Array with Low On-resistance, for (VDD - VEE) = 4.5 V to 13.2 V |
Zarlink Semiconductor |
| 227 |
MT8816 |
8 x 16 Analog Switch Array with Low On-resistance, for (VDD - VEE) = 4. 5 V to 13.2 V, with Chip Select |
Zarlink Semiconductor |
| 228 |
MT88V32 |
8 x 4 High Performance Video Switch Array (200 MHz Bandwidth), for (VDD - VEE) = 4.5 V to 13.2 V |
Zarlink Semiconductor |
| 229 |
NB4N840M |
2 x 2 Crosspoint Switch, Dual, 3.3 V, 3.2 Gb / s, with CML Outputs |
ON Semiconductor |
| 230 |
NDL7911PC517 |
1550 nm optical fiber comm. EA modulator integrated MQW-DFB laser diode module for 2.5 Gb/s D-WDM ultralong-reach applications (360 km). With FC-PC connector. ITU-T wavelengh 1551.72 nm. Frequency 193.2 THz. |
NEC |
| 231 |
NDL7911PD517 |
1550 nm optical fiber comm. EA modulator integrated MQW-DFB laser diode module for 2.5 Gb/s D-WDM ultralong-reach applications (360 km). With SC-PC connector. ITU-T wavelengh 1551.72 nm. Frequency 193.2 THz. |
NEC |
| 232 |
NDL7912PC517 |
1550 nm optical fiber comm. EA modulator integrated MQW-DFB laser diode module for 2.5 Gb/s D-WDM ultralong-reach applications (600 km). With FC-PC connector. ITU-T wavelengh 1551.72 nm. Frequency 193.2 THz. |
NEC |
| 233 |
NDL7912PD517 |
1550 nm optical fiber comm. EA modulator integrated MQW-DFB laser diode module for 2.5 Gb/s D-WDM ultralong-reach applications (600 km). With SC-PC connector. ITU-T wavelengh 1551.72 nm. Frequency 193.2 THz. |
NEC |
| 234 |
NE5520279A |
NECS 3.2 V / 2 W / L&S BAND MEDIUM POWER SILICON LD-MOSFET |
NEC |
| 235 |
NE5520279A-T1 |
NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET |
NEC |
| 236 |
NE5520379A-T1A |
NEC's 3.2 V, 3 W, L/S band medium power silicon LD-MOSFET. |
NEC |
| 237 |
NEX2303 |
3.2 W, 2.3 GHz power oscillator transistor |
NEC |
| 238 |
NTJS4160N |
Power MOSFET 30 V, 3.2 A, Single N-Channel SC-88 |
ON Semiconductor |
| 239 |
NTR4501 |
Power MOSFET 20 V, 3.2 A, Single N-Channel, SOT-23 |
ON Semiconductor |
| 240 |
NTR4501N |
Power MOSFET 20 V, 3.2 A, Single N-Channel, SOT-23 |
ON Semiconductor |
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