No. |
Part Name |
Description |
Manufacturer |
211 |
2N6306 |
Silicon NPN Power Transistor, TO-3 (cont d) package |
Silicon Transistor Corporation |
212 |
2SA1306 |
Silicon PNP Power Transistors TO-220Fa package |
Savantic |
213 |
2SA1306 |
Silicon PNP epitaxial power transistor |
TOSHIBA |
214 |
2SA1306 |
TO-220 Package Series |
TOSHIBA |
215 |
2SA1306A |
Silicon PNP Power Transistors TO-220Fa package |
Savantic |
216 |
2SA1306A |
Silicon PNP epitaxial power transistor |
TOSHIBA |
217 |
2SA1306B |
COMPLEMENTARY SILICON POWER TRANSISTORS |
Motorola |
218 |
2SA1306B |
Silicon PNP Power Transistors TO-220Fa package |
Savantic |
219 |
2SA1306B |
Silicon PNP epitaxial power transistor |
TOSHIBA |
220 |
2SA1306B |
1.5 A; 200V; 20W; silicon PNP epitaxial type stransistor. For power amplifier applications, driver stage amplifier applications |
TOSHIBA |
221 |
2SB1306 |
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE |
ROHM |
222 |
2SB306 |
High Voltage Switching Transistor |
TOSHIBA |
223 |
2SC1306 |
Silicon NPN Transistor Final RF Power Output |
Unknow |
224 |
2SC3060 |
Silicon High Speed Power Transistor |
Fujitsu Microelectronics |
225 |
2SC3060 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
226 |
2SC3061 |
Silicon High Speed Power Transistor |
Fujitsu Microelectronics |
227 |
2SC3061 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
228 |
2SC3063 |
Power Device - Power Transistors - Others |
Panasonic |
229 |
2SC3063 |
Silicon NPN Power Transistors TO-126 package |
Savantic |
230 |
2SC3064 |
NPN Epitaxial Planar Silicon CompositeTransistor |
SANYO |
231 |
2SC3065 |
NPN Epitaxial Planar Silicon CompositeTransistor |
SANYO |
232 |
2SC3066 |
DIFFERENTIAL AMP APPLICATIONS |
SANYO |
233 |
2SC3067 |
NPN Epitaxial Planar Silicon Transistor DIFFERENTIAL AMP APPLICATIONS |
SANYO |
234 |
2SC3068 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
235 |
2SC3069 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
236 |
2SC3306 |
POWER TRANSISTORS(10A,400V,100W) |
MOSPEC Semiconductor |
237 |
2SC3306 |
Silicon NPN Power Transistors TO-3P(I) package |
Savantic |
238 |
2SC3306 |
NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING/ HIGH SPEED DC-DC CONVERTER APPLICATION) |
TOSHIBA |
239 |
2SC33306 |
10Ampere NPN silicon power transistor |
MOSPEC Semiconductor |
240 |
2SC4306 |
NPN Epitaxial Planar Silicon Transistor NPN Epitaxial Planar Silicon Transistor |
SANYO |
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