| No. |
Part Name |
Description |
Manufacturer |
| 211 |
ADS8327IBRSAR |
2.7V~5.5V, 16 Bit 500KSPS Serial ADC 16-QFN -40 to 85 |
Texas Instruments |
| 212 |
ADS8327IBRSARG4 |
2.7V~5.5V, 16 Bit 500KSPS Serial ADC 16-QFN -40 to 85 |
Texas Instruments |
| 213 |
ADS8327IBRSAT |
2.7V~5.5V, 16 Bit 500KSPS Serial ADC 16-QFN -40 to 85 |
Texas Instruments |
| 214 |
ADS8327IBRSATG4 |
2.7V~5.5V, 16 Bit 500KSPS Serial ADC 16-QFN -40 to 85 |
Texas Instruments |
| 215 |
ADS8327IPW |
2.7V~5.5V, 16 Bit 500KSPS Serial ADC 16-TSSOP -40 to 85 |
Texas Instruments |
| 216 |
ADS8327IPWR |
2.7V~5.5V, 16 Bit 500KSPS Serial ADC 16-TSSOP -40 to 85 |
Texas Instruments |
| 217 |
ADS8327IRSAT |
2.7V~5.5V, 16 Bit 500KSPS Serial ADC 16-QFN -40 to 85 |
Texas Instruments |
| 218 |
ADXL327 |
Small, Low Power, 3-Axis ±2 g Accelerometer |
Analog Devices |
| 219 |
AM2327-001 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 220 |
AM2327-003 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 221 |
AM2327-005 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 222 |
AM82327-004 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 223 |
AM82327-006 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 224 |
AM82327-010 |
Silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 225 |
AM82327-015 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 226 |
AN3275SB |
CM detection IC for VCRs in the North American market |
Panasonic |
| 227 |
AN3327K |
Hi-Fi Audio Recording/Playback Amplifier IC for VCR |
Panasonic |
| 228 |
AN6327 |
VTR Playback Video Signal Processing |
Panasonic |
| 229 |
AN6327S |
VTR Playback Video Signal Processing |
Panasonic |
| 230 |
AOZ1327DI-01 |
ECPower� Type C Protection Switch Power ICs |
Alpha & Omega Semiconductor |
| 231 |
AOZ1327DI-02 |
ECPower� Type C Protection Switch Power ICs |
Alpha & Omega Semiconductor |
| 232 |
BAT64-07E6327 |
Silicon AF Schottky Diode |
Infineon |
| 233 |
BB833E6327 |
Silicon Tuning Diode |
Infineon |
| 234 |
BBY52E6327 |
Silicon High Q Hyperabrupt Dual Tunin... |
Infineon |
| 235 |
BC327 |
Silicon PNP Epitaxial Planar AF Transistor |
AEG-TELEFUNKEN |
| 236 |
BC327 |
0.625W General Purpose PNP Plastic Leaded Transistor. 45V Vceo, 0.800A Ic, 100 - 600 hFE |
Continental Device India Limited |
| 237 |
BC327 |
Si-Epitaxial PlanarTransistors |
Diotec Elektronische |
| 238 |
BC327 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
| 239 |
BC327 |
Small Signal Transistors (PNP) |
General Semiconductor |
| 240 |
BC327 |
PNP Silicon Epitaxial Planar Transistor |
Honey Technology |
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