| No. |
Part Name |
Description |
Manufacturer |
| 211 |
GL3506 |
600 V, 35 A, in-line high current silicon bridge rectifier |
TRANSYS Electronics Limited |
| 212 |
GL3506 |
IN-LINE HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 15 to 35 Amperes) |
TRSYS |
| 213 |
GL3508 |
IN-LINE HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 15 to 35 Amperes) |
Panjit International Inc |
| 214 |
GL3508 |
800 V, 35 A, in-line high current silicon bridge rectifier |
TRANSYS Electronics Limited |
| 215 |
GL3508 |
IN-LINE HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 15 to 35 Amperes) |
TRSYS |
| 216 |
HVM10 |
HIGH VOLTAGE ASSEMBLIED RECTIFIER (VOLTAGE RANGE 5000 to 16000 Volts CURRENT 0.35 Amperes) |
Rectron Semiconductor |
| 217 |
HVM12 |
HIGH VOLTAGE ASSEMBLIED RECTIFIER (VOLTAGE RANGE 5000 to 16000 Volts CURRENT 0.35 Amperes) |
Rectron Semiconductor |
| 218 |
HVM14 |
HIGH VOLTAGE ASSEMBLIED RECTIFIER (VOLTAGE RANGE 5000 to 16000 Volts CURRENT 0.35 Amperes) |
Rectron Semiconductor |
| 219 |
HVM15 |
HIGH VOLTAGE ASSEMBLIED RECTIFIER (VOLTAGE RANGE 5000 to 16000 Volts CURRENT 0.35 Amperes) |
Rectron Semiconductor |
| 220 |
HVM16 |
HIGH VOLTAGE ASSEMBLIED RECTIFIER (VOLTAGE RANGE 5000 to 16000 Volts CURRENT 0.35 Amperes) |
Rectron Semiconductor |
| 221 |
HVM20 |
HIGH VOLTAGE ASSEMBLIED RECTIFIER (VOLTAGE 20000 Volts CURRENT 0.35 Amperes) |
Rectron Semiconductor |
| 222 |
HVM5 |
HIGH VOLTAGE ASSEMBLIED RECTIFIER (VOLTAGE RANGE 5000 to 16000 Volts CURRENT 0.35 Amperes) |
Rectron Semiconductor |
| 223 |
HVM8 |
HIGH VOLTAGE ASSEMBLIED RECTIFIER (VOLTAGE RANGE 5000 to 16000 Volts CURRENT 0.35 Amperes) |
Rectron Semiconductor |
| 224 |
IRF6643 |
A 150V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 35 amperes optimized with low on resistance. |
International Rectifier |
| 225 |
IRF6643TR1PBF |
A 150V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 35 amperes optimized with low on resistance. |
International Rectifier |
| 226 |
IRF6643TRPBF |
A 150V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 35 amperes optimized with low on resistance. |
International Rectifier |
| 227 |
IRF6898M |
25V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MX package rated at 35 amperes optimized with low on resistance. |
International Rectifier |
| 228 |
IRF6898MTR1PBF |
25V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MX package rated at 35 amperes optimized with low on resistance. |
International Rectifier |
| 229 |
IRF7799L2 |
A 250V Single N-Channel HEXFET Power MOSFET in a DirectFET L8 package rated at 35 amperes |
International Rectifier |
| 230 |
IRF7799L2TRPBF |
A 250V Single N-Channel HEXFET Power MOSFET in a DirectFET L8 package rated at 35 amperes |
International Rectifier |
| 231 |
KBPC35005 |
35 A high current bridge rectifier. Max reccurent peak reverse voltage 50 V. |
Comchip Technology |
| 232 |
KBPC35005 |
35 AMP SILICON BRIDGE RECTIFIER |
Fuji Electric |
| 233 |
KBPC35005W |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 50 V. Max average forward rectified current 35 A. |
Shanghai Sunrise Electronics |
| 234 |
KBPC3500S |
35 Amp Single Phase Bridge Rectifier 50 to 1000 Volts |
Micro Commercial Components |
| 235 |
KBPC3501 |
35 A high current bridge rectifier. Max reccurent peak reverse voltage 100 V. |
Comchip Technology |
| 236 |
KBPC3501 |
35 AMP SILICON BRIDGE RECTIFIER |
Fuji Electric |
| 237 |
KBPC3501S |
35 Amp Single Phase Bridge Rectifier 50 to 1000 Volts |
Micro Commercial Components |
| 238 |
KBPC3501W |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 100 V. Max average forward rectified current 35 A. |
Shanghai Sunrise Electronics |
| 239 |
KBPC3502 |
35 A high current bridge rectifier. Max reccurent peak reverse voltage 200 V. |
Comchip Technology |
| 240 |
KBPC3502 |
35 AMP SILICON BRIDGE RECTIFIER |
Fuji Electric |
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