| No. |
Part Name |
Description |
Manufacturer |
| 211 |
OTK35-1209 |
A.C. controlled thyristors stacks, three-phase |
Mullard |
| 212 |
PHA3135-130M |
3100-3500 MHz, 130 W, 100 ms, radar pulsed power module |
MA-Com |
| 213 |
PHA3135-130M |
RadarPulsedPowerModule, 115, 130,145W,100msPulse 3.1 - 3.5 GHz |
Tyco Electronics |
| 214 |
PS2535-1 |
HIGH COLLECTOR TO EMITTER VOLTAGE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SERIES |
NEC |
| 215 |
PSMN035-100LS |
N-channel DFN3333-8 100 V 32 mΩ standard level MOSFET |
NXP Semiconductors |
| 216 |
PSMN035-150B |
N-channel TrenchMOS SiliconMAX standard level FET |
NXP Semiconductors |
| 217 |
PSMN035-150B |
N-channel enhancement mode field-effect transistor |
Philips |
| 218 |
PSMN035-150P |
N-channel TrenchMOS SiliconMAX standard level FET |
NXP Semiconductors |
| 219 |
PSMN035-150P |
N-channel enhancement mode field-effect transistor |
Philips |
| 220 |
R2M |
OVER VOLTAGE PROTACTION DIODE BREAKDOWN VOLTAGE: 135-150V REVERSE SURGE CURRENT: 1A |
Shanghai Sunrise Electronics |
| 221 |
RA07M1317M |
135-175MHz 6.5W 7.2V/ 2 Stage Amp. For PORTABLE RADIO |
Mitsubishi Electric Corporation |
| 222 |
RA07M1317M-01 |
135-175MHz 6.5W 7.2V/ 2 Stage Amp. For PORTABLE RADIO |
Mitsubishi Electric Corporation |
| 223 |
RA07M1317M-E01 |
135-175MHz 6.5W 7.2V/ 2 Stage Amp. For PORTABLE RADIO |
Mitsubishi Electric Corporation |
| 224 |
RA08H1317 |
135-175MHz 8W 12.5V PORTABLE/MOBILE RADIO |
Mitsubishi Electric Corporation |
| 225 |
RA08H1317M |
135-175MHz 8W 12.5V PORTABLE/MOBILE RADIO |
Mitsubishi Electric Corporation |
| 226 |
RA08H1317M-01 |
135-175MHz 8W 12.5V PORTABLE/MOBILE RADIO |
Mitsubishi Electric Corporation |
| 227 |
RA08H1317M-E01 |
135-175MHz 8W 12.5V PORTABLE/MOBILE RADIO |
Mitsubishi Electric Corporation |
| 228 |
RA30H1317M |
135-175MHz 30W 12.5V MOBILE RADIO |
Mitsubishi Electric Corporation |
| 229 |
RA30H1317M-01 |
135-175MHz 30W 12.5V MOBILE RADIO |
Mitsubishi Electric Corporation |
| 230 |
RA30H1317M-E01 |
135-175MHz 30W 12.5V MOBILE RADIO |
Mitsubishi Electric Corporation |
| 231 |
SAB 80C535-16-N |
SAB 80C535: ROM-less version, identical to the SAB 80C515 |
Infineon |
| 232 |
SAB-80C535-16-N-T40/85 |
8-Bit Microcontrollers - 8-Bit CMOS Microcontroller for external memory (16 MHz) |
Infineon |
| 233 |
SAB80C535-16-N |
8-Bit Microcontrollers - 8-Bit CMOS microcontroller for external memory (16MHz) |
Infineon |
| 234 |
SAB80C535-16-N |
8-Bit CMOS Single-Chip Microcontroller |
Siemens |
| 235 |
SAB80C535-16-N-T40/85 |
8-Bit Microcontrollers - 8-Bit CMOS microcontroller for external memory (16MHz) |
Infineon |
| 236 |
SAB80C535-16-N-T40_85 |
8-bit CMOS microcontroller for external memory, 16 MHz |
Siemens |
| 237 |
SAB80C535-16-NT40/85 |
8-Bit CMOS Single-Chip Microcontroller |
Siemens |
| 238 |
SKY12235-11 |
High IIP3 1.4 to 2.4 GHz Voltage-Controlled Variable Attenuator |
Skyworks Solutions |
| 239 |
SKY65535-11 |
5 GHz WLAN Front-End Module |
Skyworks Solutions |
| 240 |
SKY73035-11 |
2300 - 2700 MHz High Gain and Linearity Single Downconversion Mixer for 2G/3G Base Station Applications |
Skyworks Solutions |
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