| No. |
Part Name |
Description |
Manufacturer |
| 211 |
BC337-40 |
SMALL SIGNAL NPN TRANSISTORS |
ST Microelectronics |
| 212 |
BC337-40 |
Discrete Devices-Transistor-NPN Bipolar Transistor |
Taiwan Semiconductor |
| 213 |
BC337-40 |
Transistors, RF & AF |
Vishay |
| 214 |
BC337-40-AP |
SMALL SIGNAL NPN TRANSISTORS |
SGS Thomson Microelectronics |
| 215 |
BC337-40-AP |
SMALL SIGNAL NPN TRANSISTORS |
ST Microelectronics |
| 216 |
BC337-40RL1 |
Transistor Silicon Plastic NPN |
ON Semiconductor |
| 217 |
BC337-40ZL1 |
Transistor Silicon Plastic NPN |
ON Semiconductor |
| 218 |
BC337-D |
Amplifier Transistors NPN Silicon |
ON Semiconductor |
| 219 |
BC637-10 |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 220 |
BC637-16 |
0.800W General Purpose NPN Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 25 - hFE |
Continental Device India Limited |
| 221 |
BC637-16 |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 222 |
BC637-16 |
NPN medium power transistors |
Philips |
| 223 |
BD137-10 |
12.500W Switching NPN Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 63 - 160 hFE. Complementary BD138-10 |
Continental Device India Limited |
| 224 |
BD137-10 |
TO-126 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 225 |
BD137-10 |
1.5A plastic 10W medium power silicon NPN transistor |
Motorola |
| 226 |
BD137-10 |
NPN power transistors |
Philips |
| 227 |
BD137-10 |
NPN Silicon Transistor for AF driver and power stages of medium output |
Siemens |
| 228 |
BD137-10 |
NPN SILICON TRANSISTORS |
Siemens |
| 229 |
BD137-16 |
12.500W Switching NPN Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 100 - 250 hFE. Complementary BD138-16 |
Continental Device India Limited |
| 230 |
BD137-16 |
TO-126 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 231 |
BD137-16 |
1.5A plastic 10W medium power silicon NPN transistor |
Motorola |
| 232 |
BD137-16 |
NPN power transistors |
Philips |
| 233 |
BD137-25 |
12.500W Switching NPN Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 160 - 400 hFE. Complementary BD138-25 |
Continental Device India Limited |
| 234 |
BD137-6 |
12.500W Switching NPN Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 40 - 100 hFE. Complementary BD138-6 |
Continental Device India Limited |
| 235 |
BD137-6 |
TO-126 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 236 |
BD137-6 |
1.5A plastic 10W medium power silicon NPN transistor |
Motorola |
| 237 |
BD137-6 |
NPN SILICON TRANSISTORS |
Siemens |
| 238 |
BD138-10 |
12.500W Switching PNP Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 63 - 160 hFE. Complementary BD137-10 |
Continental Device India Limited |
| 239 |
BD138-16 |
12.500W Switching PNP Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 100 - 250 hFE. Complementary BD137-16 |
Continental Device India Limited |
| 240 |
BD138-25 |
12.500W Switching PNP Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 160 - 400 hFE. Complementary BD137-25 |
Continental Device India Limited |
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