| No. |
Part Name |
Description |
Manufacturer |
| 211 |
1PS79SB17 |
4 V, 30 mA low C_d Schottky barrier diode |
NXP Semiconductors |
| 212 |
1PS79SB17 |
1PS76SB17; 1PS79SB17; 4 V, 30 mA low C_d Schottky barrier diode |
Philips |
| 213 |
1PS79SB17 |
4 V, 30 mA low C_d Schottky barrier diode |
Philips |
| 214 |
1SMA4749 |
24 V, 1 W, surface mount silicon zener diode |
TRANSYS Electronics Limited |
| 215 |
1SMB5934 |
24 V, 1.5 W, surface mount silicon zener diode |
TRANSYS Electronics Limited |
| 216 |
1SMB5934A |
1.5 watt plastic surfase mount silicon zener diode. Nom zener voltage 24 V. +-10% tolerance. |
Motorola |
| 217 |
1SMB5934B |
1.5 watt plastic surfase mount silicon zener diode. Nom zener voltage 24 V. +-5% tolerance. |
Motorola |
| 218 |
1SMC5351 |
14 V, 5 W, surface mount silicon zener diode |
TRANSYS Electronics Limited |
| 219 |
1SMC5359 |
24 V, 5 W, surface mount silicon zener diode |
TRANSYS Electronics Limited |
| 220 |
1V015 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 24 V @ 1mA DC test current. |
NTE Electronics |
| 221 |
2021-25 |
25 W, 24 V, 2000-2130 MHz common base transistor |
GHz Technology |
| 222 |
2023-12 |
12 W, 24 V, 2-2.3 GHz, microwave-bipolar |
Acrian |
| 223 |
2023-12-2 |
12 W, 24 V, 2-2.3 GHz, microwave-bipolar |
Acrian |
| 224 |
2023-16 |
16 W, 24 V, 2-2.3 GHz, microwave-bipolar |
Acrian |
| 225 |
2023-16-2 |
16 W, 24 V, 2-2.3 GHz, microwave-bipolar |
Acrian |
| 226 |
2023-3 |
3 W, 24 V, 2-2.3 GHz, microwave-bipolar |
Acrian |
| 227 |
2023-3-2 |
3 W, 24 V, 2-2.3 GHz, microwave-bipolar |
Acrian |
| 228 |
2223-1.7 |
1.7 W, 24 V, 2200-2300 MHz common base transistor |
GHz Technology |
| 229 |
2223-9A |
9 W, 24 V, 2200-2300 MHz common base transistor |
GHz Technology |
| 230 |
2225-4L |
3.5 W, 24 V, 2200-2500 MHz common base transistor |
GHz Technology |
| 231 |
2324-20 |
20 W, 24 V, 2300-2400 MHz common base transistor |
GHz Technology |
| 232 |
2324-5 |
5 W, 24 V, 2300-2400 MHz common base transistor |
GHz Technology |
| 233 |
2425-25 |
25 W, 24 V, 2410-2470 MHz common base transistor |
GHz Technology |
| 234 |
2K0S-N024 |
Input voltage 200-260 VAC;output voltage 24 VDC;output current:83.5 A; 2.0 KW enclosed parallel power supply |
FranMar International |
| 235 |
2N2906A |
hfe min 40 Transistor polarity PNP Current Ic continuous max 0.6 A Voltage Vce sat max 0.4 V Voltage Vceo 60 V Current Ic @ Vce sat 150 mA Time fall @ Ic 50 ns Current Ic (hfe) 500 mA |
SGS Thomson Microelectronics |
| 236 |
2SD1398 |
RF & microwave transistor 850-960 MHz applications, 24 volts, 53W |
SGS Thomson Microelectronics |
| 237 |
2V015 |
Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 24 V @ 1mA DC test current. |
NTE Electronics |
| 238 |
600S-N024 |
Input voltage 90-130 VAC;output voltage 24 VDC;output current:25 A; 600 W enclosed parallel power supply |
FranMar International |
| 239 |
7B35 |
Isolated Process Current Input Signal Conditioning Module with Isolated 24 V Loop Power |
Analog Devices |
| 240 |
7B35-01-1 |
Isolated Process Current Input Signal Conditioning Module with Isolated 24 V Loop Power |
Analog Devices |
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